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    SI4214DY-T1-GE3

    SKU: 85010
    Manufacturer: Vishay
    Trans MOSFET N-CH 30V 6.8A 8-Pin SOIC N T/R
    200 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Maximum Continuous Drain Current (A) 6.8
    Maximum Drain Source Resistance (mOhm) 23.5@10V
    Typical Gate Charge @ Vgs (nC) 15@10V
    Typical Gate Charge @ 10V (nC) 15
    Typical Gate to Drain Charge (nC) 2
    Typical Gate to Source Charge (nC) 2.8
    Typical Reverse Recovery Charge (nC) 40
    Typical Input Capacitance @ Vds (pF) 785@15V
    Typical Output Capacitance (pF) 125
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 9
    Typical Rise Time (ns) 11
    Typical Turn-Off Delay Time (ns) 18
    Typical Turn-On Delay Time (ns) 13
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Dual Dual Drain
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2.5
    Maximum Continuous Drain Current (A) 6.8
    Maximum Drain Source Resistance (mOhm) 23.5@10V
    Typical Gate Charge @ Vgs (nC) 15@10V
    Typical Gate Charge @ 10V (nC) 15
    Typical Gate to Drain Charge (nC) 2
    Typical Gate to Source Charge (nC) 2.8
    Typical Reverse Recovery Charge (nC) 40
    Typical Input Capacitance @ Vds (pF) 785@15V
    Typical Output Capacitance (pF) 125
    Maximum Power Dissipation (mW) 2000
    Typical Fall Time (ns) 9
    Typical Rise Time (ns) 11
    Typical Turn-Off Delay Time (ns) 18
    Typical Turn-On Delay Time (ns) 13
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8