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    SI4143DY-T1-GE3

    SKU: 129982
    Manufacturer: Vishay
    Trans MOSFET P-CH 30V 25.3A 8-Pin SOIC N T/R
    3040 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    ECCN (US) EAR99
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 2.5
    Maximum Continuous Drain Current (A) 25.3
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 6.2@10V
    Typical Gate Charge @ Vgs (nC) 111@10V
    Typical Gate Charge @ 10V (nC) 111
    Typical Input Capacitance @ Vds (pF) 6630@15V
    Maximum Power Dissipation (mW) 2900
    Typical Fall Time (ns) 15
    Typical Rise Time (ns) 8
    Typical Turn-Off Delay Time (ns) 71
    Typical Turn-On Delay Time (ns) 18
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8
    Products specifications
    ECCN (US) EAR99
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TrenchFET
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 2.5
    Maximum Continuous Drain Current (A) 25.3
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 6.2@10V
    Typical Gate Charge @ Vgs (nC) 111@10V
    Typical Gate Charge @ 10V (nC) 111
    Typical Input Capacitance @ Vds (pF) 6630@15V
    Maximum Power Dissipation (mW) 2900
    Typical Fall Time (ns) 15
    Typical Rise Time (ns) 8
    Typical Turn-Off Delay Time (ns) 71
    Typical Turn-On Delay Time (ns) 18
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package SOIC N
    Pin Count 8
    Standard Package Method SOP
    Terminal Form Surface Mount
    Package Height 1.55(Max)
    Package Length 5(Max)
    Package Width 4(Max)
    PCB changed 8