EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Dual |
Process Technology
|
TrenchFET |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
2.5@N Channel |
Operating Junction Temperature (°C)
|
-55 to 150 |
Maximum Continuous Drain Current (A)
|
0.305@N Channel |
Maximum Drain Source Resistance (mOhm)
|
1400@10V@N Channel |
Typical Gate Charge @ Vgs (nC)
|
0.75@4.5V@N Channel |
Typical Input Capacitance @ Vds (pF)
|
30@25V@N Channel |
Maximum Power Dissipation (mW)
|
280 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Maximum Positive Gate Source Voltage (V)
|
20 |
Maximum Diode Forward Voltage (V)
|
1.4 |
Original Package
|
SC-89 |
Pin Count
|
6 |
Standard Package Method
|
SC |
Terminal Form
|
Surface Mount |
Package Height
|
0.6(Max) |
Package Length
|
1.7(Max) |
Package Width
|
1.2 |