SI1016X-T1-GE3

SKU: 42624

Manufacturer: Vishay

Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R

140930 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	NRND
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±6
Maximum Gate Threshold Voltage (V)	1
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	0.37@P Channel
Maximum Gate Source Leakage Current (nA)	1000@N Channel
Maximum IDSS (uA)	0.1
Maximum Drain Source Resistance (mOhm)	1200@4.5V@P Channel
Typical Gate Charge @ Vgs (nC)	1.5@4.5V@P Channel
Typical Gate to Drain Charge (nC)	0.45@P Channel
Typical Gate to Source Charge (nC)	0.075@N Channel
Minimum Gate Threshold Voltage (V)	0.45
Typical Output Capacitance (pF)	17@P Channel
Maximum Power Dissipation (mW)	280
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	6
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	0.515@N Channel
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.28
Maximum Pulsed Drain Current @ TC=25°C (A)	0.65
Typical Diode Forward Voltage (V)	0.8
Typical Gate Plateau Voltage (V)	1.3
Maximum Diode Forward Voltage (V)	1.2
Original Package	SC-89
Pin Count	6
Standard Package Method	SC
Terminal Form	Surface Mount
Package Height	0.6(Max)
Package Length	1.7(Max)
Package Width	1.2
PCB changed	6

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	NRND
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual
Process Technology	TrenchFET
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±6
Maximum Gate Threshold Voltage (V)	1
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	0.37@P Channel
Maximum Gate Source Leakage Current (nA)	1000@N Channel
Maximum IDSS (uA)	0.1
Maximum Drain Source Resistance (mOhm)	1200@4.5V@P Channel
Typical Gate Charge @ Vgs (nC)	1.5@4.5V@P Channel
Typical Gate to Drain Charge (nC)	0.45@P Channel
Typical Gate to Source Charge (nC)	0.075@N Channel
Minimum Gate Threshold Voltage (V)	0.45
Typical Output Capacitance (pF)	17@P Channel
Maximum Power Dissipation (mW)	280
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	6
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	0.515@N Channel
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.28
Maximum Pulsed Drain Current @ TC=25°C (A)	0.65
Typical Diode Forward Voltage (V)	0.8
Typical Gate Plateau Voltage (V)	1.3
Maximum Diode Forward Voltage (V)	1.2
Original Package	SC-89
Pin Count	6
Standard Package Method	SC
Terminal Form	Surface Mount
Package Height	0.6(Max)
Package Length	1.7(Max)
Package Width	1.2
PCB changed	6