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    IRLR110

    SKU: 54624
    Manufacturer: Vishay
    Trans MOSFET N-CH 100V 4.3A 3-Pin(2+Tab) DPAK
    10210 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8542.31.00.01
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±10
    Maximum Gate Threshold Voltage (V) 2
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 4.3
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 540@5V
    Typical Gate Charge @ Vgs (nC) 6.1(Max)@5V
    Typical Gate to Drain Charge (nC) 3.3(Max)
    Typical Gate to Source Charge (nC) 2(Max)
    Typical Reverse Recovery Charge (nC) 500
    Typical Input Capacitance @ Vds (pF) 250@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 15@25V
    Minimum Gate Threshold Voltage (V) 1
    Typical Output Capacitance (pF) 80
    Maximum Power Dissipation (mW) 2500
    Typical Fall Time (ns) 17
    Typical Rise Time (ns) 47
    Typical Turn-Off Delay Time (ns) 16
    Typical Turn-On Delay Time (ns) 9.3
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Maximum Positive Gate Source Voltage (V) 10
    Maximum Power Dissipation on PCB @ TC=25°C (W) 2.5
    Maximum Pulsed Drain Current @ TC=25°C (A) 17
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 50
    Typical Gate Plateau Voltage (V) 4.1
    Typical Reverse Recovery Time (ns) 100
    Maximum Diode Forward Voltage (V) 2.5
    Original Package DPAK
    Pin Count 3
    Standard Package Method TO-252
    Terminal Form Surface Mount
    Package Height 2.39(Max)
    Package Length 6.73(Max)
    Package Width 6.22(Max)
    PCB changed 2
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8542.31.00.01
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±10
    Maximum Gate Threshold Voltage (V) 2
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 4.3
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 540@5V
    Typical Gate Charge @ Vgs (nC) 6.1(Max)@5V
    Typical Gate to Drain Charge (nC) 3.3(Max)
    Typical Gate to Source Charge (nC) 2(Max)
    Typical Reverse Recovery Charge (nC) 500
    Typical Input Capacitance @ Vds (pF) 250@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 15@25V
    Minimum Gate Threshold Voltage (V) 1
    Typical Output Capacitance (pF) 80
    Maximum Power Dissipation (mW) 2500
    Typical Fall Time (ns) 17
    Typical Rise Time (ns) 47
    Typical Turn-Off Delay Time (ns) 16
    Typical Turn-On Delay Time (ns) 9.3
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Maximum Positive Gate Source Voltage (V) 10
    Maximum Power Dissipation on PCB @ TC=25°C (W) 2.5
    Maximum Pulsed Drain Current @ TC=25°C (A) 17
    Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 50
    Typical Gate Plateau Voltage (V) 4.1
    Typical Reverse Recovery Time (ns) 100
    Maximum Diode Forward Voltage (V) 2.5
    Original Package DPAK
    Pin Count 3
    Standard Package Method TO-252
    Terminal Form Surface Mount
    Package Height 2.39(Max)
    Package Length 6.73(Max)
    Package Width 6.22(Max)
    PCB changed 2