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    IRL520

    SKU: 61642
    Manufacturer: Vishay
    Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220
    76510 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±10
    Maximum Gate Threshold Voltage (V) 2
    Operating Junction Temperature (°C) -55 to 175
    Maximum Continuous Drain Current (A) 9.2
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 270@5V
    Typical Gate Charge @ Vgs (nC) 12(Max)@5V
    Typical Gate to Drain Charge (nC) 7.1(Max)
    Typical Gate to Source Charge (nC) 3(Max)
    Typical Reverse Recovery Charge (nC) 830
    Typical Input Capacitance @ Vds (pF) 490@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 30@25V
    Minimum Gate Threshold Voltage (V) 1
    Typical Output Capacitance (pF) 150
    Maximum Power Dissipation (mW) 60000
    Typical Fall Time (ns) 27
    Typical Rise Time (ns) 64
    Typical Turn-Off Delay Time (ns) 21
    Typical Turn-On Delay Time (ns) 9.8
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Maximum Positive Gate Source Voltage (V) 10
    Maximum Pulsed Drain Current @ TC=25°C (A) 36
    Typical Gate Plateau Voltage (V) 3.9
    Typical Reverse Recovery Time (ns) 130
    Maximum Diode Forward Voltage (V) 2.5
    Original Package TO-220
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 8.76(Max)
    Package Length 10.54(Max)
    Package Width 4.7(Max)
    PCB changed 3
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 100
    Maximum Gate Source Voltage (V) ±10
    Maximum Gate Threshold Voltage (V) 2
    Operating Junction Temperature (°C) -55 to 175
    Maximum Continuous Drain Current (A) 9.2
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 270@5V
    Typical Gate Charge @ Vgs (nC) 12(Max)@5V
    Typical Gate to Drain Charge (nC) 7.1(Max)
    Typical Gate to Source Charge (nC) 3(Max)
    Typical Reverse Recovery Charge (nC) 830
    Typical Input Capacitance @ Vds (pF) 490@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 30@25V
    Minimum Gate Threshold Voltage (V) 1
    Typical Output Capacitance (pF) 150
    Maximum Power Dissipation (mW) 60000
    Typical Fall Time (ns) 27
    Typical Rise Time (ns) 64
    Typical Turn-Off Delay Time (ns) 21
    Typical Turn-On Delay Time (ns) 9.8
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Maximum Positive Gate Source Voltage (V) 10
    Maximum Pulsed Drain Current @ TC=25°C (A) 36
    Typical Gate Plateau Voltage (V) 3.9
    Typical Reverse Recovery Time (ns) 130
    Maximum Diode Forward Voltage (V) 2.5
    Original Package TO-220
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 8.76(Max)
    Package Length 10.54(Max)
    Package Width 4.7(Max)
    PCB changed 3