IRFR9024TRPBF

SKU: 111001

Manufacturer: Vishay

Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) DPAK T/R

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	8.8
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	280@10V
Typical Gate Charge @ Vgs (nC)	19(Max)@10V
Typical Gate Charge @ 10V (nC)	19(Max)
Typical Gate to Drain Charge (nC)	11(Max)
Typical Gate to Source Charge (nC)	5.4(Max)
Typical Reverse Recovery Charge (nC)	320
Typical Input Capacitance @ Vds (pF)	570@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	65@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	360
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	29
Typical Rise Time (ns)	68
Typical Turn-Off Delay Time (ns)	15
Typical Turn-On Delay Time (ns)	13
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	35
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Gate Plateau Voltage (V)	5.9
Typical Reverse Recovery Time (ns)	100
Maximum Diode Forward Voltage (V)	6.3
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	8.8
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	280@10V
Typical Gate Charge @ Vgs (nC)	19(Max)@10V
Typical Gate Charge @ 10V (nC)	19(Max)
Typical Gate to Drain Charge (nC)	11(Max)
Typical Gate to Source Charge (nC)	5.4(Max)
Typical Reverse Recovery Charge (nC)	320
Typical Input Capacitance @ Vds (pF)	570@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	65@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	360
Maximum Power Dissipation (mW)	2500
Typical Fall Time (ns)	29
Typical Rise Time (ns)	68
Typical Turn-Off Delay Time (ns)	15
Typical Turn-On Delay Time (ns)	13
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	35
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Gate Plateau Voltage (V)	5.9
Typical Reverse Recovery Time (ns)	100
Maximum Diode Forward Voltage (V)	6.3
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2