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    IRFI9634G

    SKU: 132322
    Manufacturer: Vishay
    Trans MOSFET P-CH 250V 4.1A 3-Pin(3+Tab) TO-220FP
    380 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 250
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 4.1
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 1000@10V
    Typical Gate Charge @ Vgs (nC) 38(Max)@10V
    Typical Gate Charge @ 10V (nC) 38(Max)
    Typical Gate to Drain Charge (nC) 18(Max)
    Typical Gate to Source Charge (nC) 8(Max)
    Typical Reverse Recovery Charge (nC) 1500
    Typical Input Capacitance @ Vds (pF) 680@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 40@25V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 170
    Maximum Power Dissipation (mW) 35000
    Typical Fall Time (ns) 21
    Typical Rise Time (ns) 23
    Typical Turn-Off Delay Time (ns) 34
    Typical Turn-On Delay Time (ns) 12
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 16
    Typical Gate Plateau Voltage (V) 5.7
    Typical Reverse Recovery Time (ns) 190
    Maximum Diode Forward Voltage (V) 6.5
    Original Package TO-220FP
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 16.12(Max)
    Package Length 10.63(Max)
    Package Width 4.83(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Not Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 250
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 4.1
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 1000@10V
    Typical Gate Charge @ Vgs (nC) 38(Max)@10V
    Typical Gate Charge @ 10V (nC) 38(Max)
    Typical Gate to Drain Charge (nC) 18(Max)
    Typical Gate to Source Charge (nC) 8(Max)
    Typical Reverse Recovery Charge (nC) 1500
    Typical Input Capacitance @ Vds (pF) 680@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 40@25V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 170
    Maximum Power Dissipation (mW) 35000
    Typical Fall Time (ns) 21
    Typical Rise Time (ns) 23
    Typical Turn-Off Delay Time (ns) 34
    Typical Turn-On Delay Time (ns) 12
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 16
    Typical Gate Plateau Voltage (V) 5.7
    Typical Reverse Recovery Time (ns) 190
    Maximum Diode Forward Voltage (V) 6.5
    Original Package TO-220FP
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 16.12(Max)
    Package Length 10.63(Max)
    Package Width 4.83(Max)
    PCB changed 3
    Tab Tab