EU RoHS
|
Compliant |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single |
Channel Mode
|
Enhancement |
Channel Type
|
P |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
4 |
Operating Junction Temperature (°C)
|
-55 to 175 |
Maximum Continuous Drain Current (A)
|
18 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
100 |
Maximum Drain Source Resistance (mOhm)
|
140@10V |
Typical Gate Charge @ Vgs (nC)
|
34(Max)@10V |
Typical Gate Charge @ 10V (nC)
|
34(Max) |
Typical Gate to Drain Charge (nC)
|
16(Max) |
Typical Gate to Source Charge (nC)
|
9.9(Max) |
Typical Reverse Recovery Charge (nC)
|
280 |
Typical Input Capacitance @ Vds (pF)
|
1100@25V |
Typical Reverse Transfer Capacitance @ Vds (pF)
|
100@25V |
Minimum Gate Threshold Voltage (V)
|
2 |
Typical Output Capacitance (pF)
|
620 |
Maximum Power Dissipation (mW)
|
88000 |
Typical Fall Time (ns)
|
58 |
Typical Rise Time (ns)
|
120 |
Typical Turn-Off Delay Time (ns)
|
20 |
Typical Turn-On Delay Time (ns)
|
18 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
175 |
Maximum Positive Gate Source Voltage (V)
|
20 |
Maximum Pulsed Drain Current @ TC=25°C (A)
|
72 |
Typical Gate Plateau Voltage (V)
|
6.5 |
Typical Reverse Recovery Time (ns)
|
100 |
Maximum Diode Forward Voltage (V)
|
6.3 |
Minimum Gate Resistance (Ohm)
|
0.7 |
Maximum Gate Resistance (Ohm)
|
3.9 |
Original Package
|
TO-220AB |
Pin Count
|
3 |
Standard Package Method
|
TO-220 |
Terminal Form
|
Through Hole |
Package Height
|
9.14(Max) |
Package Length
|
10.52(Max) |
Package Width
|
4.65(Max) |
PCB changed
|
3 |
Tab
|
Tab |