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    IRF9Z34PBF

    SKU: 132318
    Manufacturer: Vishay
    Trans MOSFET P-CH 60V 18A 3-Pin(3+Tab) TO-220AB
    3030 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Operating Junction Temperature (°C) -55 to 175
    Maximum Continuous Drain Current (A) 18
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 100
    Maximum Drain Source Resistance (mOhm) 140@10V
    Typical Gate Charge @ Vgs (nC) 34(Max)@10V
    Typical Gate Charge @ 10V (nC) 34(Max)
    Typical Gate to Drain Charge (nC) 16(Max)
    Typical Gate to Source Charge (nC) 9.9(Max)
    Typical Reverse Recovery Charge (nC) 280
    Typical Input Capacitance @ Vds (pF) 1100@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 100@25V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 620
    Maximum Power Dissipation (mW) 88000
    Typical Fall Time (ns) 58
    Typical Rise Time (ns) 120
    Typical Turn-Off Delay Time (ns) 20
    Typical Turn-On Delay Time (ns) 18
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 72
    Typical Gate Plateau Voltage (V) 6.5
    Typical Reverse Recovery Time (ns) 100
    Maximum Diode Forward Voltage (V) 6.3
    Minimum Gate Resistance (Ohm) 0.7
    Maximum Gate Resistance (Ohm) 3.9
    Original Package TO-220AB
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 9.14(Max)
    Package Length 10.52(Max)
    Package Width 4.65(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type P
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Operating Junction Temperature (°C) -55 to 175
    Maximum Continuous Drain Current (A) 18
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 100
    Maximum Drain Source Resistance (mOhm) 140@10V
    Typical Gate Charge @ Vgs (nC) 34(Max)@10V
    Typical Gate Charge @ 10V (nC) 34(Max)
    Typical Gate to Drain Charge (nC) 16(Max)
    Typical Gate to Source Charge (nC) 9.9(Max)
    Typical Reverse Recovery Charge (nC) 280
    Typical Input Capacitance @ Vds (pF) 1100@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 100@25V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 620
    Maximum Power Dissipation (mW) 88000
    Typical Fall Time (ns) 58
    Typical Rise Time (ns) 120
    Typical Turn-Off Delay Time (ns) 20
    Typical Turn-On Delay Time (ns) 18
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 72
    Typical Gate Plateau Voltage (V) 6.5
    Typical Reverse Recovery Time (ns) 100
    Maximum Diode Forward Voltage (V) 6.3
    Minimum Gate Resistance (Ohm) 0.7
    Maximum Gate Resistance (Ohm) 3.9
    Original Package TO-220AB
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 9.14(Max)
    Package Length 10.52(Max)
    Package Width 4.65(Max)
    PCB changed 3
    Tab Tab