IRF9Z24PBF

SKU: 118093

Manufacturer: Vishay

Trans MOSFET P-CH 60V 11A 3-Pin(3+Tab) TO-220AB

780 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	11
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	280@10V
Typical Gate Charge @ Vgs (nC)	19(Max)@10V
Typical Gate Charge @ 10V (nC)	19(Max)
Typical Gate to Drain Charge (nC)	11(Max)
Typical Gate to Source Charge (nC)	5.4(Max)
Typical Reverse Recovery Charge (nC)	320
Typical Input Capacitance @ Vds (pF)	570@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	65@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	360
Maximum Power Dissipation (mW)	60000
Typical Fall Time (ns)	29
Typical Rise Time (ns)	68
Typical Turn-Off Delay Time (ns)	15
Typical Turn-On Delay Time (ns)	13
Operating Temperature-Min	-55
Operating Temperature-Max	175
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	44
Typical Gate Plateau Voltage (V)	7
Typical Reverse Recovery Time (ns)	100
Maximum Diode Forward Voltage (V)	6.3
Original Package	TO-220AB
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.14(Max)
Package Length	10.52(Max)
Package Width	4.65(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.10.00.80
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	11
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	280@10V
Typical Gate Charge @ Vgs (nC)	19(Max)@10V
Typical Gate Charge @ 10V (nC)	19(Max)
Typical Gate to Drain Charge (nC)	11(Max)
Typical Gate to Source Charge (nC)	5.4(Max)
Typical Reverse Recovery Charge (nC)	320
Typical Input Capacitance @ Vds (pF)	570@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	65@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	360
Maximum Power Dissipation (mW)	60000
Typical Fall Time (ns)	29
Typical Rise Time (ns)	68
Typical Turn-Off Delay Time (ns)	15
Typical Turn-On Delay Time (ns)	13
Operating Temperature-Min	-55
Operating Temperature-Max	175
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	44
Typical Gate Plateau Voltage (V)	7
Typical Reverse Recovery Time (ns)	100
Maximum Diode Forward Voltage (V)	6.3
Original Package	TO-220AB
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.14(Max)
Package Length	10.52(Max)
Package Width	4.65(Max)
PCB changed	3
Tab	Tab