IRF9610PBF

SKU: 110985

Manufacturer: Vishay

Trans MOSFET P-CH 200V 1.8A 3-Pin(3+Tab) TO-220AB

940 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	1.8
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	3000@10V
Typical Gate Charge @ Vgs (nC)	11(Max)@10V
Typical Gate Charge @ 10V (nC)	11(Max)
Typical Gate to Drain Charge (nC)	4(Max)
Typical Gate to Source Charge (nC)	7(Max)
Typical Reverse Recovery Charge (nC)	1700
Typical Input Capacitance @ Vds (pF)	170@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	15@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	50
Maximum Power Dissipation (mW)	20000
Typical Fall Time (ns)	8
Typical Rise Time (ns)	15
Typical Turn-Off Delay Time (ns)	10
Typical Turn-On Delay Time (ns)	8
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	7
Typical Gate Plateau Voltage (V)	9.9
Typical Reverse Recovery Time (ns)	240
Maximum Diode Forward Voltage (V)	5.8
Original Package	TO-220AB
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.14(Max)
Package Length	10.52(Max)
Package Width	4.65(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	1.8
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	3000@10V
Typical Gate Charge @ Vgs (nC)	11(Max)@10V
Typical Gate Charge @ 10V (nC)	11(Max)
Typical Gate to Drain Charge (nC)	4(Max)
Typical Gate to Source Charge (nC)	7(Max)
Typical Reverse Recovery Charge (nC)	1700
Typical Input Capacitance @ Vds (pF)	170@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	15@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	50
Maximum Power Dissipation (mW)	20000
Typical Fall Time (ns)	8
Typical Rise Time (ns)	15
Typical Turn-Off Delay Time (ns)	10
Typical Turn-On Delay Time (ns)	8
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	7
Typical Gate Plateau Voltage (V)	9.9
Typical Reverse Recovery Time (ns)	240
Maximum Diode Forward Voltage (V)	5.8
Original Package	TO-220AB
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.14(Max)
Package Length	10.52(Max)
Package Width	4.65(Max)
PCB changed	3
Tab	Tab