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    IRF610PBF

    SKU: 61623
    Manufacturer: Vishay
    Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB
    25720 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 200
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 3.3
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 1500@10V
    Typical Gate Charge @ Vgs (nC) 8.2(Max)@10V
    Typical Gate Charge @ 10V (nC) 8.2(Max)
    Typical Gate to Drain Charge (nC) 4.5(Max)
    Typical Gate to Source Charge (nC) 1.8(Max)
    Typical Reverse Recovery Charge (nC) 600
    Typical Input Capacitance @ Vds (pF) 140@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 15@25V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 53
    Maximum Power Dissipation (mW) 36000
    Typical Fall Time (ns) 8.9
    Typical Rise Time (ns) 17
    Typical Turn-Off Delay Time (ns) 14
    Typical Turn-On Delay Time (ns) 8.2
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 10
    Typical Gate Plateau Voltage (V) 7.8
    Typical Reverse Recovery Time (ns) 150
    Maximum Diode Forward Voltage (V) 2
    Original Package TO-220AB
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 9.14(Max)
    Package Length 10.52(Max)
    Package Width 4.65(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 200
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4
    Operating Junction Temperature (°C) -55 to 150
    Maximum Continuous Drain Current (A) 3.3
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 25
    Maximum Drain Source Resistance (mOhm) 1500@10V
    Typical Gate Charge @ Vgs (nC) 8.2(Max)@10V
    Typical Gate Charge @ 10V (nC) 8.2(Max)
    Typical Gate to Drain Charge (nC) 4.5(Max)
    Typical Gate to Source Charge (nC) 1.8(Max)
    Typical Reverse Recovery Charge (nC) 600
    Typical Input Capacitance @ Vds (pF) 140@25V
    Typical Reverse Transfer Capacitance @ Vds (pF) 15@25V
    Minimum Gate Threshold Voltage (V) 2
    Typical Output Capacitance (pF) 53
    Maximum Power Dissipation (mW) 36000
    Typical Fall Time (ns) 8.9
    Typical Rise Time (ns) 17
    Typical Turn-Off Delay Time (ns) 14
    Typical Turn-On Delay Time (ns) 8.2
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Maximum Positive Gate Source Voltage (V) 20
    Maximum Pulsed Drain Current @ TC=25°C (A) 10
    Typical Gate Plateau Voltage (V) 7.8
    Typical Reverse Recovery Time (ns) 150
    Maximum Diode Forward Voltage (V) 2
    Original Package TO-220AB
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 9.14(Max)
    Package Length 10.52(Max)
    Package Width 4.65(Max)
    PCB changed 3
    Tab Tab