IRF540PBF

SKU: 96810

Manufacturer: Vishay

Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220AB

12850 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	28
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	77@10V
Typical Gate Charge @ Vgs (nC)	72(Max)@10V
Typical Gate Charge @ 10V (nC)	72(Max)
Typical Gate to Drain Charge (nC)	32(Max)
Typical Gate to Source Charge (nC)	11(Max)
Typical Reverse Recovery Charge (nC)	1300
Typical Input Capacitance @ Vds (pF)	1700@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	120@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	560
Maximum Power Dissipation (mW)	150000
Typical Fall Time (ns)	43
Typical Rise Time (ns)	44
Typical Turn-Off Delay Time (ns)	53
Typical Turn-On Delay Time (ns)	11
Operating Temperature-Min	-55
Operating Temperature-Max	175
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	110
Typical Gate Plateau Voltage (V)	5.8
Typical Reverse Recovery Time (ns)	180
Maximum Diode Forward Voltage (V)	2.5
Pin Count	3
Standard Package Method	TO-220
Original Package	TO-220AB
Terminal Form	Through Hole
Package Height	9.01(Max)
Package Length	10.51(Max)
Package Width	4.65(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	28
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	25
Maximum Drain Source Resistance (mOhm)	77@10V
Typical Gate Charge @ Vgs (nC)	72(Max)@10V
Typical Gate Charge @ 10V (nC)	72(Max)
Typical Gate to Drain Charge (nC)	32(Max)
Typical Gate to Source Charge (nC)	11(Max)
Typical Reverse Recovery Charge (nC)	1300
Typical Input Capacitance @ Vds (pF)	1700@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	120@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	560
Maximum Power Dissipation (mW)	150000
Typical Fall Time (ns)	43
Typical Rise Time (ns)	44
Typical Turn-Off Delay Time (ns)	53
Typical Turn-On Delay Time (ns)	11
Operating Temperature-Min	-55
Operating Temperature-Max	175
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	110
Typical Gate Plateau Voltage (V)	5.8
Typical Reverse Recovery Time (ns)	180
Maximum Diode Forward Voltage (V)	2.5
Pin Count	3
Standard Package Method	TO-220
Original Package	TO-220AB
Terminal Form	Through Hole
Package Height	9.01(Max)
Package Length	10.51(Max)
Package Width	4.65(Max)
PCB changed	3
Tab	Tab