|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Body Material
|
Si |
|
Configuration
|
Single |
|
Process Technology
|
DTMOSIV |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
650 |
|
Maximum Gate Source Voltage (V)
|
±30 |
|
Maximum Gate Threshold Voltage (V)
|
3.5 |
|
Maximum Continuous Drain Current (A)
|
11.1 |
|
Maximum Gate Source Leakage Current (nA)
|
1000 |
|
Maximum IDSS (uA)
|
10 |
|
Maximum Drain Source Resistance (mOhm)
|
440@10V |
|
Typical Gate Charge @ Vgs (nC)
|
25@10V |
|
Typical Gate Charge @ 10V (nC)
|
25 |
|
Typical Input Capacitance @ Vds (pF)
|
890@300V |
|
Maximum Power Dissipation (mW)
|
100000 |
|
Typical Fall Time (ns)
|
5.5 |
|
Typical Rise Time (ns)
|
23 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Original Package
|
DPAK |
|
Pin Count
|
3 |
|
Standard Package Method
|
TO-252 |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
2.3 |
|
Package Length
|
6.6 |
|
Package Width
|
6.1 |
|
PCB changed
|
2 |
|
Tab
|
Tab |