2SK3565

SKU: 24243

Manufacturer: Toshiba

Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-220SIS

52500 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	900
Maximum Gate Source Voltage (V)	±30
Maximum Continuous Drain Current (A)	5
Maximum Drain Source Resistance (mOhm)	2500@10V
Typical Gate Charge @ Vgs (nC)	28@10V
Typical Gate Charge @ 10V (nC)	28
Typical Input Capacitance @ Vds (pF)	1150@25V
Maximum Power Dissipation (mW)	45000
Typical Fall Time (ns)	60
Typical Rise Time (ns)	30
Operating Temperature-Min	-55
Operating Temperature-Max	150
Original Package	TO-220SIS
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	15
Package Length	10
Package Width	4.5
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	900
Maximum Gate Source Voltage (V)	±30
Maximum Continuous Drain Current (A)	5
Maximum Drain Source Resistance (mOhm)	2500@10V
Typical Gate Charge @ Vgs (nC)	28@10V
Typical Gate Charge @ 10V (nC)	28
Typical Input Capacitance @ Vds (pF)	1150@25V
Maximum Power Dissipation (mW)	45000
Typical Fall Time (ns)	60
Typical Rise Time (ns)	30
Operating Temperature-Min	-55
Operating Temperature-Max	150
Original Package	TO-220SIS
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	15
Package Length	10
Package Width	4.5
PCB changed	3
Tab	Tab