2SK2961

SKU: 66776

Manufacturer: Toshiba

Trans MOSFET N-CH Si 60V 2A 3-Pin TO-92 Mod

10 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	L2-pi-MOS V
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Operating Junction Temperature (°C)	150
Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	270@10V
Typical Gate Charge @ Vgs (nC)	5.8@10V
Typical Gate Charge @ 10V (nC)	5.8
Typical Gate to Drain Charge (nC)	1.7
Typical Gate to Source Charge (nC)	4.1
Typical Reverse Recovery Charge (nC)	40.5
Typical Input Capacitance @ Vds (pF)	170@10V
Typical Reverse Transfer Capacitance @ Vds (pF)	25@10V
Minimum Gate Threshold Voltage (V)	0.8
Typical Output Capacitance (pF)	75
Maximum Power Dissipation (mW)	900
Typical Fall Time (ns)	50
Typical Rise Time (ns)	10
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	6
Typical Reverse Recovery Time (ns)	45
Maximum Diode Forward Voltage (V)	1.5
Original Package	TO-92 Mod
Pin Count	3
Standard Package Method	TO-92
Terminal Form	Through Hole
Package Height	8.2(Max)
Package Length	5.1(Max)
Package Width	4.1(Max)
PCB changed	3

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	L2-pi-MOS V
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Operating Junction Temperature (°C)	150
Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	270@10V
Typical Gate Charge @ Vgs (nC)	5.8@10V
Typical Gate Charge @ 10V (nC)	5.8
Typical Gate to Drain Charge (nC)	1.7
Typical Gate to Source Charge (nC)	4.1
Typical Reverse Recovery Charge (nC)	40.5
Typical Input Capacitance @ Vds (pF)	170@10V
Typical Reverse Transfer Capacitance @ Vds (pF)	25@10V
Minimum Gate Threshold Voltage (V)	0.8
Typical Output Capacitance (pF)	75
Maximum Power Dissipation (mW)	900
Typical Fall Time (ns)	50
Typical Rise Time (ns)	10
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	6
Typical Reverse Recovery Time (ns)	45
Maximum Diode Forward Voltage (V)	1.5
Original Package	TO-92 Mod
Pin Count	3
Standard Package Method	TO-92
Terminal Form	Through Hole
Package Height	8.2(Max)
Package Length	5.1(Max)
Package Width	4.1(Max)
PCB changed	3