2SK2837

SKU: 80770

Manufacturer: Toshiba

Trans MOSFET N-CH Si 500V 20A 3-Pin(3+Tab) TO-3PN

2050 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	pi-MOS V
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	150
Maximum Continuous Drain Current (A)	20
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	270@10V
Typical Gate Charge @ Vgs (nC)	80@10V
Typical Gate Charge @ 10V (nC)	80
Typical Gate to Drain Charge (nC)	32
Typical Gate to Source Charge (nC)	48
Typical Reverse Recovery Charge (nC)	5400
Typical Input Capacitance @ Vds (pF)	3720@10V
Typical Reverse Transfer Capacitance @ Vds (pF)	340
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	1165
Maximum Power Dissipation (mW)	150000
Typical Fall Time (ns)	50
Typical Rise Time (ns)	30
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	80
Typical Reverse Recovery Time (ns)	540
Maximum Diode Forward Voltage (V)	1.7
Original Package	TO-3PN
Pin Count	3
Terminal Form	Through Hole
Package Height	19
Package Length	15.9(Max)
Package Width	4.5
PCB changed	3

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Products specifications

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	pi-MOS V
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	150
Maximum Continuous Drain Current (A)	20
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	270@10V
Typical Gate Charge @ Vgs (nC)	80@10V
Typical Gate Charge @ 10V (nC)	80
Typical Gate to Drain Charge (nC)	32
Typical Gate to Source Charge (nC)	48
Typical Reverse Recovery Charge (nC)	5400
Typical Input Capacitance @ Vds (pF)	3720@10V
Typical Reverse Transfer Capacitance @ Vds (pF)	340
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	1165
Maximum Power Dissipation (mW)	150000
Typical Fall Time (ns)	50
Typical Rise Time (ns)	30
Operating Temperature-Min	-55
Operating Temperature-Max	150
Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	80
Typical Reverse Recovery Time (ns)	540
Maximum Diode Forward Voltage (V)	1.7
Original Package	TO-3PN
Pin Count	3
Terminal Form	Through Hole
Package Height	19
Package Length	15.9(Max)
Package Width	4.5
PCB changed	3