EU RoHS
|
Supplier Unconfirmed |
ECCN (US)
|
EAR99 |
Part Status
|
Obsolete |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Single Dual Drain |
Process Technology
|
L2-pi-MOS V |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
60 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
2 |
Maximum Continuous Drain Current (A)
|
2 |
Maximum Gate Source Leakage Current (nA)
|
10000 |
Maximum IDSS (uA)
|
100 |
Maximum Drain Source Resistance (mOhm)
|
300@10V |
Typical Gate Charge @ Vgs (nC)
|
6@10V |
Typical Gate Charge @ 10V (nC)
|
6 |
Typical Input Capacitance @ Vds (pF)
|
150@10V |
Maximum Power Dissipation (mW)
|
1500 |
Typical Fall Time (ns)
|
50 |
Typical Rise Time (ns)
|
25 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
PW-Mini |
Pin Count
|
4 |
Standard Package Method
|
SOT |
Terminal Form
|
Surface Mount |
Package Height
|
1.6(Max) |
Package Length
|
4.6(Max) |
Package Width
|
2.5 |
PCB changed
|
3 |
Tab
|
Tab |