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    2SK2615

    SKU: 17251
    Manufacturer: Toshiba
    Trans MOSFET N-CH Si 60V 2A 4-Pin(3+Tab) PW-Mini
    21770 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Supplier Unconfirmed
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Dual Drain
    Process Technology L2-pi-MOS V
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2
    Maximum Continuous Drain Current (A) 2
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 100
    Maximum Drain Source Resistance (mOhm) 300@10V
    Typical Gate Charge @ Vgs (nC) 6@10V
    Typical Gate Charge @ 10V (nC) 6
    Typical Input Capacitance @ Vds (pF) 150@10V
    Maximum Power Dissipation (mW) 1500
    Typical Fall Time (ns) 50
    Typical Rise Time (ns) 25
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Original Package PW-Mini
    Pin Count 4
    Standard Package Method SOT
    Terminal Form Surface Mount
    Package Height 1.6(Max)
    Package Length 4.6(Max)
    Package Width 2.5
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Supplier Unconfirmed
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Dual Drain
    Process Technology L2-pi-MOS V
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 60
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 2
    Maximum Continuous Drain Current (A) 2
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 100
    Maximum Drain Source Resistance (mOhm) 300@10V
    Typical Gate Charge @ Vgs (nC) 6@10V
    Typical Gate Charge @ 10V (nC) 6
    Typical Input Capacitance @ Vds (pF) 150@10V
    Maximum Power Dissipation (mW) 1500
    Typical Fall Time (ns) 50
    Typical Rise Time (ns) 25
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Original Package PW-Mini
    Pin Count 4
    Standard Package Method SOT
    Terminal Form Surface Mount
    Package Height 1.6(Max)
    Package Length 4.6(Max)
    Package Width 2.5
    PCB changed 3
    Tab Tab