2SK1119

SKU: 8587

Manufacturer: Toshiba

Trans MOSFET N-CH Si 1KV 4A 3-Pin(3+Tab) TO-220AB

810 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1000
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	4
Maximum Drain Source Resistance (mOhm)	3800@10V
Typical Gate Charge @ Vgs (nC)	60@10V
Typical Gate Charge @ 10V (nC)	60
Typical Input Capacitance @ Vds (pF)	700@25V
Maximum Power Dissipation (mW)	100000
Typical Fall Time (ns)	12
Typical Rise Time (ns)	18
Operating Temperature-Min	-55
Operating Temperature-Max	150
Original Package	TO-220AB
Pin Count	3
Terminal Form	Through Hole
Package Height	9(Max)
Package Length	10.3(Max)
Package Width	4.7(Max)
PCB changed	3

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Products specifications

ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	1000
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	4
Maximum Drain Source Resistance (mOhm)	3800@10V
Typical Gate Charge @ Vgs (nC)	60@10V
Typical Gate Charge @ 10V (nC)	60
Typical Input Capacitance @ Vds (pF)	700@25V
Maximum Power Dissipation (mW)	100000
Typical Fall Time (ns)	12
Typical Rise Time (ns)	18
Operating Temperature-Min	-55
Operating Temperature-Max	150
Original Package	TO-220AB
Pin Count	3
Terminal Form	Through Hole
Package Height	9(Max)
Package Length	10.3(Max)
Package Width	4.7(Max)
PCB changed	3