CSD16415Q5

SKU: 32530

Manufacturer: Texas Instruments

Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single Quad Drain Triple Source
Process Technology	NexFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	25
Maximum Gate Source Voltage (V)	16
Maximum Gate Threshold Voltage (V)	1.9
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	100
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	1.15@10V
Typical Gate Charge @ Vgs (nC)	21@4.5V
Typical Gate to Drain Charge (nC)	5.2
Typical Gate to Source Charge (nC)	8.3
Typical Reverse Recovery Charge (nC)	72
Typical Input Capacitance @ Vds (pF)	3150@12.5V
Typical Reverse Transfer Capacitance @ Vds (pF)	175@12.5V
Minimum Gate Threshold Voltage (V)	1.2
Typical Output Capacitance (pF)	2530
Maximum Power Dissipation (mW)	3200
Typical Fall Time (ns)	12.7
Typical Rise Time (ns)	30
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	16.6
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	3.2
Maximum Pulsed Drain Current @ TC=25°C (A)	200
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Diode Forward Voltage (V)	0.85
Typical Gate Plateau Voltage (V)	2.9
Typical Reverse Recovery Time (ns)	45
Maximum Diode Forward Voltage (V)	1
Typical Gate Threshold Voltage (V)	1.5
Maximum Gate Resistance (Ohm)	2.4
Maximum Positive Gate Source Voltage (V)	16
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	261
Pin Count	8
Standard Package Method	SON
Original Package	VSON-CLIP EP
Terminal Form	Surface Mount
Package Height	1.05(Max)
Package Length	5.1(Max)
Package Width	6.1(Max)
PCB changed	8

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single Quad Drain Triple Source
Process Technology	NexFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	25
Maximum Gate Source Voltage (V)	16
Maximum Gate Threshold Voltage (V)	1.9
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	100
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	1.15@10V
Typical Gate Charge @ Vgs (nC)	21@4.5V
Typical Gate to Drain Charge (nC)	5.2
Typical Gate to Source Charge (nC)	8.3
Typical Reverse Recovery Charge (nC)	72
Typical Input Capacitance @ Vds (pF)	3150@12.5V
Typical Reverse Transfer Capacitance @ Vds (pF)	175@12.5V
Minimum Gate Threshold Voltage (V)	1.2
Typical Output Capacitance (pF)	2530
Maximum Power Dissipation (mW)	3200
Typical Fall Time (ns)	12.7
Typical Rise Time (ns)	30
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	16.6
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	3.2
Maximum Pulsed Drain Current @ TC=25°C (A)	200
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	50
Typical Diode Forward Voltage (V)	0.85
Typical Gate Plateau Voltage (V)	2.9
Typical Reverse Recovery Time (ns)	45
Maximum Diode Forward Voltage (V)	1
Typical Gate Threshold Voltage (V)	1.5
Maximum Gate Resistance (Ohm)	2.4
Maximum Positive Gate Source Voltage (V)	16
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	261
Pin Count	8
Standard Package Method	SON
Original Package	VSON-CLIP EP
Terminal Form	Surface Mount
Package Height	1.05(Max)
Package Length	5.1(Max)
Package Width	6.1(Max)
PCB changed	8