STS8DNH3LL

SKU: 43217

Manufacturer: STMicroelectronics

Trans MOSFET N-CH 30V 8A 8-Pin SO N T/R

5960 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Dual Drain
Process Technology	StripFET III
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±16
Operating Junction Temperature (°C)	150
Maximum Continuous Drain Current (A)	8
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	22@10V
Typical Gate Charge @ Vgs (nC)	7@4.5V
Typical Gate to Drain Charge (nC)	2.3
Typical Gate to Source Charge (nC)	2.5
Typical Reverse Recovery Charge (nC)	5.7
Typical Input Capacitance @ Vds (pF)	857@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	20@25V
Minimum Gate Threshold Voltage (V)	1
Typical Output Capacitance (pF)	147
Maximum Power Dissipation (mW)	2000
Typical Fall Time (ns)	8
Typical Rise Time (ns)	14.5
Typical Turn-Off Delay Time (ns)	23
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	16
Maximum Pulsed Drain Current @ TC=25°C (A)	32
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	62.5
Typical Gate Plateau Voltage (V)	3
Typical Reverse Recovery Time (ns)	15
Maximum Diode Forward Voltage (V)	1.5
Original Package	SO N
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.65(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Dual Drain
Process Technology	StripFET III
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±16
Operating Junction Temperature (°C)	150
Maximum Continuous Drain Current (A)	8
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	22@10V
Typical Gate Charge @ Vgs (nC)	7@4.5V
Typical Gate to Drain Charge (nC)	2.3
Typical Gate to Source Charge (nC)	2.5
Typical Reverse Recovery Charge (nC)	5.7
Typical Input Capacitance @ Vds (pF)	857@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	20@25V
Minimum Gate Threshold Voltage (V)	1
Typical Output Capacitance (pF)	147
Maximum Power Dissipation (mW)	2000
Typical Fall Time (ns)	8
Typical Rise Time (ns)	14.5
Typical Turn-Off Delay Time (ns)	23
Typical Turn-On Delay Time (ns)	12
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	16
Maximum Pulsed Drain Current @ TC=25°C (A)	32
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	62.5
Typical Gate Plateau Voltage (V)	3
Typical Reverse Recovery Time (ns)	15
Maximum Diode Forward Voltage (V)	1.5
Original Package	SO N
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.65(Max)
Package Length	5(Max)
Package Width	4(Max)
PCB changed	8