STP6NK90Z

SKU: 156453

Manufacturer: STMicroelectronics

Trans MOSFET N-CH 900V 5.8A 3-Pin(3+Tab) TO-220AB Tube

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperMESH
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	900
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	5.8
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	2000@10V
Typical Gate Charge @ Vgs (nC)	46.5@10V
Typical Gate Charge @ 10V (nC)	46.5
Typical Gate to Drain Charge (nC)	25
Typical Gate to Source Charge (nC)	8.5
Typical Reverse Recovery Charge (nC)	5880000
Typical Input Capacitance @ Vds (pF)	1350@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	26@25V
Minimum Gate Threshold Voltage (V)	3
Typical Output Capacitance (pF)	130
Maximum Power Dissipation (mW)	140000
Typical Fall Time (ns)	20
Typical Rise Time (ns)	45
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	17
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	23.2
Typical Gate Plateau Voltage (V)	5.9
Typical Reverse Recovery Time (ns)	840
Maximum Diode Forward Voltage (V)	1.6
Typical Gate Threshold Voltage (V)	3.75
Maximum Positive Gate Source Voltage (V)	30
Original Package	TO-220AB
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.15(Max)
Package Length	10.4(Max)
Package Width	4.6(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperMESH
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	900
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	5.8
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	2000@10V
Typical Gate Charge @ Vgs (nC)	46.5@10V
Typical Gate Charge @ 10V (nC)	46.5
Typical Gate to Drain Charge (nC)	25
Typical Gate to Source Charge (nC)	8.5
Typical Reverse Recovery Charge (nC)	5880000
Typical Input Capacitance @ Vds (pF)	1350@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	26@25V
Minimum Gate Threshold Voltage (V)	3
Typical Output Capacitance (pF)	130
Maximum Power Dissipation (mW)	140000
Typical Fall Time (ns)	20
Typical Rise Time (ns)	45
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	17
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	23.2
Typical Gate Plateau Voltage (V)	5.9
Typical Reverse Recovery Time (ns)	840
Maximum Diode Forward Voltage (V)	1.6
Typical Gate Threshold Voltage (V)	3.75
Maximum Positive Gate Source Voltage (V)	30
Original Package	TO-220AB
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.15(Max)
Package Length	10.4(Max)
Package Width	4.6(Max)
PCB changed	3
Tab	Tab