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    STF11N65M2

    SKU: 43173
    Manufacturer: STMicroelectronics
    Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) TO-220FP Tube
    50 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology MDmesh II Plus
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 650
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 7
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 680@10V
    Typical Gate Charge @ Vgs (nC) 12.5@10V
    Typical Gate Charge @ 10V (nC) 12.5
    Typical Input Capacitance @ Vds (pF) 410@100V
    Maximum Power Dissipation (mW) 25000
    Typical Fall Time (ns) 15
    Typical Rise Time (ns) 7.5
    Typical Turn-Off Delay Time (ns) 26
    Typical Turn-On Delay Time (ns) 9.5
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package TO-220FP
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 16.4(Max)
    Package Length 10.4(Max)
    Package Width 4.6(Max)
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single
    Process Technology MDmesh II Plus
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 650
    Maximum Gate Source Voltage (V) ±25
    Maximum Gate Threshold Voltage (V) 4
    Maximum Continuous Drain Current (A) 7
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 680@10V
    Typical Gate Charge @ Vgs (nC) 12.5@10V
    Typical Gate Charge @ 10V (nC) 12.5
    Typical Input Capacitance @ Vds (pF) 410@100V
    Maximum Power Dissipation (mW) 25000
    Typical Fall Time (ns) 15
    Typical Rise Time (ns) 7.5
    Typical Turn-Off Delay Time (ns) 26
    Typical Turn-On Delay Time (ns) 9.5
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tube
    Original Package TO-220FP
    Pin Count 3
    Standard Package Method TO-220
    Terminal Form Through Hole
    Package Height 16.4(Max)
    Package Length 10.4(Max)
    Package Width 4.6(Max)
    PCB changed 3
    Tab Tab