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    PrevNE55410GR-T3-AZ
    NextPD54003L-E

    PD20010-E

    SKU: 80272
    Manufacturer: STMicroelectronics
    Trans RF FET N-CH 40V 5A 3-Pin PowerSO-10RF (Formed lead) Tube
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    3750 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Process Technology LDMOS
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) 15
    Maximum VSWR 20(Min)
    Maximum Continuous Drain Current (A) 5
    Typical Input Capacitance @ Vds (pF) 45@12.5V
    Typical Reverse Transfer Capacitance @ Vds (pF) 1.2@12.5V
    Typical Output Capacitance @ Vds (pF) 36@12.5V
    Maximum Power Dissipation (mW) 59000
    Output Power (W) 15(Typ)
    Typical Power Gain (dB) 11
    Maximum Frequency (MHz) 1000
    Typical Drain Efficiency (%) 53
    Operating Temperature-Min -65
    Operating Temperature-Max 165
    Packing Method Tube
    Pin Count 3
    Standard Package Method PowerSO-10RF (Formed lead)
    Original Package PowerSO-10RF (Formed lead)
    Terminal Form Surface Mount
    Package Height 3.5
    Package Length 9.5
    Package Width 9.4
    PCB changed 3
    • PD20010-E Price
    • PD20 Series
    • PD20010-E Datasheet
    • PD20010-E Application
    • PD20010-E Pdf
    • PD20010-E Pinout
    • PD20010-E Image
    • PD20010-E Picture
    • PD20010-E In Stock
    • PD20010-E Distributor
    • PD20010-E RF MOSFETs
    • PD20010-E STMicroelectronics
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Configuration Single
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Process Technology LDMOS
    Maximum Drain Source Voltage (V) 40
    Maximum Gate Source Voltage (V) 15
    Maximum VSWR 20(Min)
    Maximum Continuous Drain Current (A) 5
    Typical Input Capacitance @ Vds (pF) 45@12.5V
    Typical Reverse Transfer Capacitance @ Vds (pF) 1.2@12.5V
    Typical Output Capacitance @ Vds (pF) 36@12.5V
    Maximum Power Dissipation (mW) 59000
    Output Power (W) 15(Typ)
    Typical Power Gain (dB) 11
    Maximum Frequency (MHz) 1000
    Typical Drain Efficiency (%) 53
    Operating Temperature-Min -65
    Operating Temperature-Max 165
    Packing Method Tube
    Pin Count 3
    Standard Package Method PowerSO-10RF (Formed lead)
    Original Package PowerSO-10RF (Formed lead)
    Terminal Form Surface Mount
    Package Height 3.5
    Package Length 9.5
    Package Width 9.4
    PCB changed 3
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