EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
NRND |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Configuration
|
Single Quad Drain Triple Source |
Process Technology
|
TMOS |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
1 |
Maximum Drain Source Voltage (V)
|
40 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Gate Threshold Voltage (V)
|
2.5 |
Maximum Continuous Drain Current (A)
|
14 |
Maximum Gate Source Leakage Current (nA)
|
100 |
Maximum IDSS (uA)
|
100 |
Maximum Drain Source Resistance (mOhm)
|
5.4@10V |
Typical Gate Charge @ Vgs (nC)
|
35@10V |
Typical Gate Charge @ 10V (nC)
|
35 |
Typical Input Capacitance @ Vds (pF)
|
2410@25V |
Maximum Power Dissipation (mW)
|
3100 |
Typical Fall Time (ns)
|
11.9 |
Typical Rise Time (ns)
|
5.6 |
Typical Turn-Off Delay Time (ns)
|
19.7 |
Typical Turn-On Delay Time (ns)
|
4.1 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Original Package
|
DFN EP |
Pin Count
|
8 |
Standard Package Method
|
DFN |
Terminal Form
|
Surface Mount |
Package Height
|
1.17(Max) |
Package Length
|
5(Max) |
Package Width
|
5.85(Max) |
PCB changed
|
8 |