K4A8G165WC-BCTD

SKU: 153700

Manufacturer: Samsung Electronics

DRAM Chip DDR4 SDRAM 8Gbit 512Mx16 1.2V 96-Pin FBGA

2240 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8542.32.00.36
DRAM Type	DDR4 SDRAM
Chip Density (bit)	8G
Organization	512Mx16
Number of Internal Banks	8
Number of Words per Bank	64M
Number of Bits/Word (bit)	16
Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	2666
Maximum Access Time (ns)	0.17
Address Bus Width (bit)	20
Interface Type	POD
Operating Supply Voltage-Min (V)	1.14
Typical Operating Supply Voltage (V)	1.2
Operating Supply Voltage-Max (V)	1.26
Operating Current (mA)	166
Operating Temperature-Min	0
Operating Temperature-Max	95
Number of I/O Lines (bit)	16
Original Package	FBGA
Pin Count	96
Standard Package Method	BGA
Terminal Form	Surface Mount
Package Length	13.3
Package Width	7.5
PCB changed	96

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8542.32.00.36
DRAM Type	DDR4 SDRAM
Chip Density (bit)	8G
Organization	512Mx16
Number of Internal Banks	8
Number of Words per Bank	64M
Number of Bits/Word (bit)	16
Data Bus Width (bit)	16
Maximum Clock Rate (MHz)	2666
Maximum Access Time (ns)	0.17
Address Bus Width (bit)	20
Interface Type	POD
Operating Supply Voltage-Min (V)	1.14
Typical Operating Supply Voltage (V)	1.2
Operating Supply Voltage-Max (V)	1.26
Operating Current (mA)	166
Operating Temperature-Min	0
Operating Temperature-Max	95
Number of I/O Lines (bit)	16
Original Package	FBGA
Pin Count	96
Standard Package Method	BGA
Terminal Form	Surface Mount
Package Length	13.3
Package Width	7.5
PCB changed	96