K4A4G085WE-BCPB

SKU: 68739

Manufacturer: Samsung Electronics

DRAM Chip DDR4 SDRAM 4Gbit 512Mx8 1.2V

14800 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

ECCN (US)	EAR99
Part Status	Active
HTS	8542.32.00.36
DRAM Type	DDR4 SDRAM
Chip Density (bit)	4G
Organization	512Mx8
Number of Internal Banks	16
Number of Words per Bank	32M
Number of Bits/Word (bit)	8
Data Bus Width (bit)	8
Maximum Clock Rate (MHz)	2133
Maximum Access Time (ns)	0.18
Address Bus Width (bit)	17
Interface Type	POD
Operating Supply Voltage-Min (V)	1.14
Typical Operating Supply Voltage (V)	1.2
Operating Supply Voltage-Max (V)	1.26
Operating Current (mA)	84
Operating Temperature-Min	0
Operating Temperature-Max	95
Supplier Temperature Grade	Commercial

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Products specifications

ECCN (US)	EAR99
Part Status	Active
HTS	8542.32.00.36
DRAM Type	DDR4 SDRAM
Chip Density (bit)	4G
Organization	512Mx8
Number of Internal Banks	16
Number of Words per Bank	32M
Number of Bits/Word (bit)	8
Data Bus Width (bit)	8
Maximum Clock Rate (MHz)	2133
Maximum Access Time (ns)	0.18
Address Bus Width (bit)	17
Interface Type	POD
Operating Supply Voltage-Min (V)	1.14
Typical Operating Supply Voltage (V)	1.2
Operating Supply Voltage-Max (V)	1.26
Operating Current (mA)	84
Operating Temperature-Min	0
Operating Temperature-Max	95
Supplier Temperature Grade	Commercial