NTDV20P06LT4G

SKU: 112735

Manufacturer: onsemi

Trans MOSFET P-CH 60V 15.5A Automotive 3-Pin(2+Tab) DPAK T/R

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	Yes
PPAP	Yes
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	15.5
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	150@5V
Typical Gate Charge @ Vgs (nC)	15@5V
Typical Gate to Drain Charge (nC)	7
Typical Gate to Source Charge (nC)	4
Typical Reverse Recovery Charge (nC)	0.13
Typical Input Capacitance @ Vds (pF)	740@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	66@25V
Minimum Gate Threshold Voltage (V)	1
Typical Output Capacitance (pF)	207
Maximum Power Dissipation (mW)	65000
Typical Fall Time (ns)	70
Typical Rise Time (ns)	90
Typical Turn-Off Delay Time (ns)	28
Typical Turn-On Delay Time (ns)	11
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	50
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	110
Typical Diode Forward Voltage (V)	1.5
Typical Gate Plateau Voltage (V)	3.1
Typical Reverse Recovery Time (ns)	60
Maximum Diode Forward Voltage (V)	2.5
Typical Gate Threshold Voltage (V)	1.5
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.38(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	Yes
PPAP	Yes
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	15.5
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	150@5V
Typical Gate Charge @ Vgs (nC)	15@5V
Typical Gate to Drain Charge (nC)	7
Typical Gate to Source Charge (nC)	4
Typical Reverse Recovery Charge (nC)	0.13
Typical Input Capacitance @ Vds (pF)	740@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	66@25V
Minimum Gate Threshold Voltage (V)	1
Typical Output Capacitance (pF)	207
Maximum Power Dissipation (mW)	65000
Typical Fall Time (ns)	70
Typical Rise Time (ns)	90
Typical Turn-Off Delay Time (ns)	28
Typical Turn-On Delay Time (ns)	11
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Maximum Pulsed Drain Current @ TC=25°C (A)	50
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	110
Typical Diode Forward Voltage (V)	1.5
Typical Gate Plateau Voltage (V)	3.1
Typical Reverse Recovery Time (ns)	60
Maximum Diode Forward Voltage (V)	2.5
Typical Gate Threshold Voltage (V)	1.5
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.38(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2
Tab	Tab