NTD3055-094T4G

SKU: 63326

Manufacturer: onsemi

Trans MOSFET N-CH 60V 12A 3-Pin(2+Tab) DPAK T/R

Request Free Samples

4990 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

QUANTITY

Increments of 0 pcs

Specifications
Contact Us

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	12
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	94@10V
Typical Gate Charge @ Vgs (nC)	10.9@10V
Typical Gate Charge @ 10V (nC)	10.9
Typical Reverse Recovery Charge (nC)	47
Typical Input Capacitance @ Vds (pF)	323@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	34@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	107
Maximum Power Dissipation (mW)	48000
Typical Fall Time (ns)	23.9
Typical Rise Time (ns)	32.3
Typical Turn-Off Delay Time (ns)	25.2
Typical Turn-On Delay Time (ns)	7.7
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.1
Maximum Pulsed Drain Current @ TC=25°C (A)	45
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	100
Typical Diode Forward Voltage (V)	0.94
Typical Gate Plateau Voltage (V)	6
Typical Reverse Recovery Time (ns)	33.1
Maximum Diode Forward Voltage (V)	1.15
Typical Gate Threshold Voltage (V)	2.9
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.38(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2
Tab	Tab

Your name

Your email

Enquiry

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	12
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	94@10V
Typical Gate Charge @ Vgs (nC)	10.9@10V
Typical Gate Charge @ 10V (nC)	10.9
Typical Reverse Recovery Charge (nC)	47
Typical Input Capacitance @ Vds (pF)	323@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	34@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	107
Maximum Power Dissipation (mW)	48000
Typical Fall Time (ns)	23.9
Typical Rise Time (ns)	32.3
Typical Turn-Off Delay Time (ns)	25.2
Typical Turn-On Delay Time (ns)	7.7
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.1
Maximum Pulsed Drain Current @ TC=25°C (A)	45
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	100
Typical Diode Forward Voltage (V)	0.94
Typical Gate Plateau Voltage (V)	6
Typical Reverse Recovery Time (ns)	33.1
Maximum Diode Forward Voltage (V)	1.15
Typical Gate Threshold Voltage (V)	2.9
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.38(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2
Tab	Tab