MTP23P06V

SKU: 27830

Manufacturer: onsemi

Trans MOSFET P-CH 60V 23A 3-Pin(3+Tab) TO-220AB Tube

73800 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.21.00.75
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±15
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	23
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	10
Maximum Drain Source Resistance (mOhm)	120@10V
Typical Gate Charge @ Vgs (nC)	38@10V
Typical Gate Charge @ 10V (nC)	38
Typical Reverse Recovery Charge (nC)	804
Typical Input Capacitance @ Vds (pF)	1160@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	105@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	380
Maximum Power Dissipation (mW)	90000
Typical Fall Time (ns)	62
Typical Rise Time (ns)	98.3
Typical Turn-Off Delay Time (ns)	41
Typical Turn-On Delay Time (ns)	13.8
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	15
Maximum Pulsed Drain Current @ TC=25°C (A)	81
Typical Diode Forward Voltage (V)	2.2
Typical Gate Plateau Voltage (V)	6.8
Typical Reverse Recovery Time (ns)	142.2
Maximum Diode Forward Voltage (V)	3.5
Typical Gate Threshold Voltage (V)	2.8
Pin Count	3
Standard Package Method	TO-220
Original Package	TO-220AB
Terminal Form	Through Hole
Package Height	9.28(Max)
Package Length	10.53(Max)
Package Width	4.83(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.21.00.75
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±15
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	23
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	10
Maximum Drain Source Resistance (mOhm)	120@10V
Typical Gate Charge @ Vgs (nC)	38@10V
Typical Gate Charge @ 10V (nC)	38
Typical Reverse Recovery Charge (nC)	804
Typical Input Capacitance @ Vds (pF)	1160@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	105@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	380
Maximum Power Dissipation (mW)	90000
Typical Fall Time (ns)	62
Typical Rise Time (ns)	98.3
Typical Turn-Off Delay Time (ns)	41
Typical Turn-On Delay Time (ns)	13.8
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	15
Maximum Pulsed Drain Current @ TC=25°C (A)	81
Typical Diode Forward Voltage (V)	2.2
Typical Gate Plateau Voltage (V)	6.8
Typical Reverse Recovery Time (ns)	142.2
Maximum Diode Forward Voltage (V)	3.5
Typical Gate Threshold Voltage (V)	2.8
Pin Count	3
Standard Package Method	TO-220
Original Package	TO-220AB
Terminal Form	Through Hole
Package Height	9.28(Max)
Package Length	10.53(Max)
Package Width	4.83(Max)
PCB changed	3
Tab	Tab