MTD2955VT4

SKU: 84393

Manufacturer: onsemi

Trans MOSFET P-CH 60V 12A 3-Pin(2+Tab) DPAK T/R

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Netherlands

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Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	12
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	10
Maximum Drain Source Resistance (mOhm)	230@10V
Typical Gate Charge @ Vgs (nC)	19@10V
Typical Gate Charge @ 10V (nC)	19
Typical Reverse Recovery Charge (nC)	530
Typical Input Capacitance @ Vds (pF)	550@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	50@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	200
Maximum Power Dissipation (mW)	60000
Typical Fall Time (ns)	39
Typical Rise Time (ns)	50
Typical Turn-Off Delay Time (ns)	24
Typical Turn-On Delay Time (ns)	15
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.1
Maximum Pulsed Drain Current @ TC=25°C (A)	42
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	100
Typical Diode Forward Voltage (V)	1.8
Typical Gate Plateau Voltage (V)	6.8
Typical Reverse Recovery Time (ns)	115
Maximum Diode Forward Voltage (V)	3
Typical Gate Threshold Voltage (V)	2.8
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.38(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2
Tab	Tab

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Products specifications

EU RoHS	Not Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	12
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	10
Maximum Drain Source Resistance (mOhm)	230@10V
Typical Gate Charge @ Vgs (nC)	19@10V
Typical Gate Charge @ 10V (nC)	19
Typical Reverse Recovery Charge (nC)	530
Typical Input Capacitance @ Vds (pF)	550@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	50@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	200
Maximum Power Dissipation (mW)	60000
Typical Fall Time (ns)	39
Typical Rise Time (ns)	50
Typical Turn-Off Delay Time (ns)	24
Typical Turn-On Delay Time (ns)	15
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.1
Maximum Pulsed Drain Current @ TC=25°C (A)	42
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	100
Typical Diode Forward Voltage (V)	1.8
Typical Gate Plateau Voltage (V)	6.8
Typical Reverse Recovery Time (ns)	115
Maximum Diode Forward Voltage (V)	3
Typical Gate Threshold Voltage (V)	2.8
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-252
Original Package	DPAK
Terminal Form	Surface Mount
Package Height	2.38(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2
Tab	Tab