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    MCH6646-TL-E

    SKU: 126542
    Manufacturer: onsemi
    Trans MOSFET N-CH Si 20V 2A T/R
    11520 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Dual
    Channel Mode Depletion
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±10
    Maximum Continuous Drain Current (A) 2
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 160@4V
    Typical Gate Charge @ Vgs (nC) 1.78@4V
    Typical Input Capacitance @ Vds (pF) 115@10V
    Maximum Power Dissipation (mW) 800
    Typical Fall Time (ns) 30
    Typical Rise Time (ns) 27
    Typical Turn-Off Delay Time (ns) 20
    Typical Turn-On Delay Time (ns) 7.5
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Products specifications
    EU RoHS Compliant
    ECCN (US) EAR99
    Part Status Obsolete
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Dual
    Channel Mode Depletion
    Channel Type N
    Number of Elements per pcs 2
    Maximum Drain Source Voltage (V) 20
    Maximum Gate Source Voltage (V) ±10
    Maximum Continuous Drain Current (A) 2
    Maximum Gate Source Leakage Current (nA) 10000
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 160@4V
    Typical Gate Charge @ Vgs (nC) 1.78@4V
    Typical Input Capacitance @ Vds (pF) 115@10V
    Maximum Power Dissipation (mW) 800
    Typical Fall Time (ns) 30
    Typical Rise Time (ns) 27
    Typical Turn-Off Delay Time (ns) 20
    Typical Turn-On Delay Time (ns) 7.5
    Operating Temperature-Min -55
    Operating Temperature-Max 150