|
EU RoHS
|
Compliant with Exemption |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Obsolete |
|
SVHC
|
Yes |
|
SVHC Exceeds Threshold
|
Yes |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Body Material
|
Si |
|
Configuration
|
Single Quad Drain |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
P |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
12 |
|
Maximum Gate Source Voltage (V)
|
±10 |
|
Maximum Continuous Drain Current (A)
|
5 |
|
Maximum Drain Source Resistance (mOhm)
|
43@4.5V |
|
Typical Gate Charge @ Vgs (nC)
|
6.9@4.5V |
|
Typical Input Capacitance @ Vds (pF)
|
660@6V |
|
Maximum Power Dissipation (mW)
|
1500 |
|
Typical Fall Time (ns)
|
69 |
|
Typical Rise Time (ns)
|
57 |
|
Typical Turn-Off Delay Time (ns)
|
72 |
|
Typical Turn-On Delay Time (ns)
|
7.4 |
|
Operating Temperature-Min
|
-55 |