IRFM120A-NB82108

SKU: 33193

Manufacturer: onsemi

Trans MOSFET N-CH 100V 2.3A

3540 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Part Status	Unconfirmed
Product Category	Power MOSFET
Configuration	Single Dual Drain
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	2.3
Maximum Drain Source Resistance (mOhm)	200@10V
Typical Gate Charge @ Vgs (nC)	16@10V
Typical Gate Charge @ 10V (nC)	16
Typical Input Capacitance @ Vds (pF)	370@25V
Maximum Power Dissipation (mW)	2400
Typical Fall Time (ns)	28
Typical Rise Time (ns)	14
Typical Turn-Off Delay Time (ns)	36
Typical Turn-On Delay Time (ns)	14
Operating Temperature-Min	-55

Your name

Your email

Enquiry

Products specifications

EU RoHS	Supplier Unconfirmed
ECCN (US)	EAR99
Part Status	Unconfirmed
Product Category	Power MOSFET
Configuration	Single Dual Drain
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	2.3
Maximum Drain Source Resistance (mOhm)	200@10V
Typical Gate Charge @ Vgs (nC)	16@10V
Typical Gate Charge @ 10V (nC)	16
Typical Input Capacitance @ Vds (pF)	370@25V
Maximum Power Dissipation (mW)	2400
Typical Fall Time (ns)	28
Typical Rise Time (ns)	14
Typical Turn-Off Delay Time (ns)	36
Typical Turn-On Delay Time (ns)	14
Operating Temperature-Min	-55