FW389-TL-2W

SKU: 124989

Manufacturer: onsemi

Trans MOSFET N/P-CH 100V 2A 8-Pin SOIC T/R

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2240 parts IN STOCK

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Netherlands

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Rohs State : Need to verify

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Dual Drain
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	300@10V@P Channel
Typical Gate Charge @ Vgs (nC)	21@10V@P Channel
Typical Gate Charge @ 10V (nC)	21@P Channel
Typical Gate to Drain Charge (nC)	4.4@P Channel
Typical Gate to Source Charge (nC)	2.8@P Channel
Typical Input Capacitance @ Vds (pF)	1000@20V@P Channel
Typical Reverse Transfer Capacitance @ Vds (pF)	47@20V@P Channel
Typical Output Capacitance (pF)	77@P Channel
Maximum Power Dissipation (mW)	2200
Typical Fall Time (ns)	40@P Channel
Typical Rise Time (ns)	16@P Channel
Typical Turn-Off Delay Time (ns)	110@P Channel
Typical Turn-On Delay Time (ns)	12@P Channel
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Typical Diode Forward Voltage (V)	0.79@P Channel
Typical Gate Plateau Voltage (V)	3@P Channel
Maximum Diode Forward Voltage (V)	1.2
Minimum Gate Resistance (Ohm)	0
Maximum Gate Resistance (Ohm)	50@P Channel
Original Package	SOIC
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.38
Package Length	4.9
Package Width	3.9
PCB changed	8

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual Dual Drain
Channel Mode	Enhancement
Channel Type	P
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	100
Maximum Gate Source Voltage (V)	±20
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2
Maximum Gate Source Leakage Current (nA)	10000
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	300@10V@P Channel
Typical Gate Charge @ Vgs (nC)	21@10V@P Channel
Typical Gate Charge @ 10V (nC)	21@P Channel
Typical Gate to Drain Charge (nC)	4.4@P Channel
Typical Gate to Source Charge (nC)	2.8@P Channel
Typical Input Capacitance @ Vds (pF)	1000@20V@P Channel
Typical Reverse Transfer Capacitance @ Vds (pF)	47@20V@P Channel
Typical Output Capacitance (pF)	77@P Channel
Maximum Power Dissipation (mW)	2200
Typical Fall Time (ns)	40@P Channel
Typical Rise Time (ns)	16@P Channel
Typical Turn-Off Delay Time (ns)	110@P Channel
Typical Turn-On Delay Time (ns)	12@P Channel
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Positive Gate Source Voltage (V)	20
Typical Diode Forward Voltage (V)	0.79@P Channel
Typical Gate Plateau Voltage (V)	3@P Channel
Maximum Diode Forward Voltage (V)	1.2
Minimum Gate Resistance (Ohm)	0
Maximum Gate Resistance (Ohm)	50@P Channel
Original Package	SOIC
Pin Count	8
Standard Package Method	SOP
Terminal Form	Surface Mount
Package Height	1.38
Package Length	4.9
Package Width	3.9
PCB changed	8