FQPF19N20C

SKU: 82482

Manufacturer: onsemi

Trans MOSFET N-CH 200V 19A 3-Pin(3+Tab) TO-220FP Tube

2800 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	DMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	19
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	10
Maximum Drain Source Resistance (mOhm)	170@10V
Typical Gate Charge @ Vgs (nC)	40.5@10V
Typical Gate Charge @ 10V (nC)	40.5
Typical Gate to Drain Charge (nC)	22.5
Typical Gate to Source Charge (nC)	6
Typical Reverse Recovery Charge (nC)	1630
Typical Input Capacitance @ Vds (pF)	830@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	85@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	195
Maximum Power Dissipation (mW)	43000
Typical Fall Time (ns)	115
Typical Rise Time (ns)	150
Typical Turn-Off Delay Time (ns)	135
Typical Turn-On Delay Time (ns)	15
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	76
Typical Gate Plateau Voltage (V)	6.4
Typical Reverse Recovery Time (ns)	208
Maximum Diode Forward Voltage (V)	1.5
Maximum Positive Gate Source Voltage (V)	30
Pin Count	3
Standard Package Method	TO-220
Original Package	TO-220FP
Terminal Form	Through Hole
Package Height	15.87
Package Length	10.16
Package Width	4.7
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	DMOS
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	19
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	10
Maximum Drain Source Resistance (mOhm)	170@10V
Typical Gate Charge @ Vgs (nC)	40.5@10V
Typical Gate Charge @ 10V (nC)	40.5
Typical Gate to Drain Charge (nC)	22.5
Typical Gate to Source Charge (nC)	6
Typical Reverse Recovery Charge (nC)	1630
Typical Input Capacitance @ Vds (pF)	830@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	85@25V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	195
Maximum Power Dissipation (mW)	43000
Typical Fall Time (ns)	115
Typical Rise Time (ns)	150
Typical Turn-Off Delay Time (ns)	135
Typical Turn-On Delay Time (ns)	15
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	76
Typical Gate Plateau Voltage (V)	6.4
Typical Reverse Recovery Time (ns)	208
Maximum Diode Forward Voltage (V)	1.5
Maximum Positive Gate Source Voltage (V)	30
Pin Count	3
Standard Package Method	TO-220
Original Package	TO-220FP
Terminal Form	Through Hole
Package Height	15.87
Package Length	10.16
Package Width	4.7
PCB changed	3
Tab	Tab