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    FGH60T65SHD-F155

    SKU: 143614
    Manufacturer: onsemi
    Trans IGBT Chip N-CH 650V 120A 349000mW 3-Pin(3+Tab) TO-247 Tube
    780 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Technology Field Stop
    Channel Type N
    Configuration Single
    Maximum Gate Emitter Voltage (V) ±20
    Collector-Emitter Voltage-Max (V) 650
    Typical Collector Emitter Saturation Voltage (V) 1.6
    Maximum Continuous Collector Current (A) 120
    Maximum Gate Emitter Leakage Current (uA) 0.4
    Maximum Power Dissipation (mW) 349000
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package TO-247
    Pin Count 3
    Standard Package Method TO-247
    Terminal Form Through Hole
    Package Height 20.57
    Package Length 15.62
    Package Width 4.7
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Technology Field Stop
    Channel Type N
    Configuration Single
    Maximum Gate Emitter Voltage (V) ±20
    Collector-Emitter Voltage-Max (V) 650
    Typical Collector Emitter Saturation Voltage (V) 1.6
    Maximum Continuous Collector Current (A) 120
    Maximum Gate Emitter Leakage Current (uA) 0.4
    Maximum Power Dissipation (mW) 349000
    Operating Temperature-Min -55
    Operating Temperature-Max 175
    Packing Method Tube
    Original Package TO-247
    Pin Count 3
    Standard Package Method TO-247
    Terminal Form Through Hole
    Package Height 20.57
    Package Length 15.62
    Package Width 4.7
    PCB changed 3
    Tab Tab