FDP8870

SKU: 47259

Manufacturer: onsemi

Trans MOSFET N-CH 30V 19A 3-Pin(3+Tab) TO-220 Tube

980 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
SVHC	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	PowerTrench
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.5
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	19
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	4.1@10V
Typical Gate Charge @ Vgs (nC)	106@10V
Typical Gate Charge @ 10V (nC)	106
Typical Gate to Drain Charge (nC)	23
Typical Gate to Source Charge (nC)	15
Typical Input Capacitance @ Vds (pF)	5200@15V
Typical Reverse Transfer Capacitance @ Vds (pF)	570@15V
Minimum Gate Threshold Voltage (V)	1.2
Typical Output Capacitance (pF)	970
Maximum Power Dissipation (mW)	160000
Typical Fall Time (ns)	46
Typical Rise Time (ns)	105
Typical Turn-Off Delay Time (ns)	70
Typical Turn-On Delay Time (ns)	11
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	20
Typical Gate Plateau Voltage (V)	3
Maximum Diode Forward Voltage (V)	1.25
Original Package	TO-220
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.4(Max)
Package Length	10.67(Max)
Package Width	4.7(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
SVHC	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	PowerTrench
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	2.5
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	19
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	4.1@10V
Typical Gate Charge @ Vgs (nC)	106@10V
Typical Gate Charge @ 10V (nC)	106
Typical Gate to Drain Charge (nC)	23
Typical Gate to Source Charge (nC)	15
Typical Input Capacitance @ Vds (pF)	5200@15V
Typical Reverse Transfer Capacitance @ Vds (pF)	570@15V
Minimum Gate Threshold Voltage (V)	1.2
Typical Output Capacitance (pF)	970
Maximum Power Dissipation (mW)	160000
Typical Fall Time (ns)	46
Typical Rise Time (ns)	105
Typical Turn-Off Delay Time (ns)	70
Typical Turn-On Delay Time (ns)	11
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	20
Typical Gate Plateau Voltage (V)	3
Maximum Diode Forward Voltage (V)	1.25
Original Package	TO-220
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.4(Max)
Package Length	10.67(Max)
Package Width	4.7(Max)
PCB changed	3
Tab	Tab