FDP032N08

SKU: 61409

Manufacturer: onsemi

Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-220 Tube

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	PowerTrench
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	75
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4.5
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	235
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	3.2@10V
Typical Gate Charge @ Vgs (nC)	169@10V
Typical Gate Charge @ 10V (nC)	169
Typical Gate to Drain Charge (nC)	47
Typical Gate to Source Charge (nC)	60
Typical Reverse Recovery Charge (nC)	77
Typical Input Capacitance @ Vds (pF)	11400@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	595@25V
Minimum Gate Threshold Voltage (V)	2.5
Typical Output Capacitance (pF)	1360
Maximum Power Dissipation (mW)	375000
Typical Fall Time (ns)	121
Typical Rise Time (ns)	191
Typical Turn-Off Delay Time (ns)	335
Typical Turn-On Delay Time (ns)	230
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	940
Typical Gate Plateau Voltage (V)	5.4
Typical Reverse Recovery Time (ns)	53
Maximum Diode Forward Voltage (V)	1.3
Typical Gate Threshold Voltage (V)	3.5
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-220
Original Package	TO-220
Terminal Form	Through Hole
Package Height	9.4(Max)
Package Length	10.67(Max)
Package Width	4.7(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	PowerTrench
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	75
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4.5
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	235
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	3.2@10V
Typical Gate Charge @ Vgs (nC)	169@10V
Typical Gate Charge @ 10V (nC)	169
Typical Gate to Drain Charge (nC)	47
Typical Gate to Source Charge (nC)	60
Typical Reverse Recovery Charge (nC)	77
Typical Input Capacitance @ Vds (pF)	11400@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	595@25V
Minimum Gate Threshold Voltage (V)	2.5
Typical Output Capacitance (pF)	1360
Maximum Power Dissipation (mW)	375000
Typical Fall Time (ns)	121
Typical Rise Time (ns)	191
Typical Turn-Off Delay Time (ns)	335
Typical Turn-On Delay Time (ns)	230
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	940
Typical Gate Plateau Voltage (V)	5.4
Typical Reverse Recovery Time (ns)	53
Maximum Diode Forward Voltage (V)	1.3
Typical Gate Threshold Voltage (V)	3.5
Maximum Positive Gate Source Voltage (V)	20
Pin Count	3
Standard Package Method	TO-220
Original Package	TO-220
Terminal Form	Through Hole
Package Height	9.4(Max)
Package Length	10.67(Max)
Package Width	4.7(Max)
PCB changed	3
Tab	Tab