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    FDMS86350

    SKU: 32976
    Manufacturer: onsemi
    Trans MOSFET N-CH 80V 25A 8-Pin Power 56 EP T/R
    2280 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 80
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4.5
    Maximum Continuous Drain Current (A) 25
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 2.4@10V
    Typical Gate Charge @ Vgs (nC) 90@8V
    Typical Gate Charge @ 10V (nC) 110
    Typical Input Capacitance @ Vds (pF) 8030@40V
    Maximum Power Dissipation (mW) 2700
    Typical Fall Time (ns) 11
    Typical Rise Time (ns) 34
    Typical Turn-Off Delay Time (ns) 40
    Typical Turn-On Delay Time (ns) 50
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package Power 56 EP
    Pin Count 8
    Terminal Form Surface Mount
    Package Height 1.05(Max)
    Package Length 5.1(Max)
    Package Width 6.25(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status Active
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Configuration Single Quad Drain Triple Source
    Process Technology TMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 80
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 4.5
    Maximum Continuous Drain Current (A) 25
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 2.4@10V
    Typical Gate Charge @ Vgs (nC) 90@8V
    Typical Gate Charge @ 10V (nC) 110
    Typical Input Capacitance @ Vds (pF) 8030@40V
    Maximum Power Dissipation (mW) 2700
    Typical Fall Time (ns) 11
    Typical Rise Time (ns) 34
    Typical Turn-Off Delay Time (ns) 40
    Typical Turn-On Delay Time (ns) 50
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package Power 56 EP
    Pin Count 8
    Terminal Form Surface Mount
    Package Height 1.05(Max)
    Package Length 5.1(Max)
    Package Width 6.25(Max)
    PCB changed 8