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    FDMS8050

    SKU: 61406
    Manufacturer: onsemi
    Trans MOSFET N-CH Si 30V 55A 8-Pin PQFN EP T/R
    3520 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quad Drain Triple Source
    Process Technology TMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3
    Maximum Continuous Drain Current (A) 55
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 0.65@10V
    Typical Gate Charge @ Vgs (nC) 204@10V
    Typical Gate Charge @ 10V (nC) 204
    Typical Input Capacitance @ Vds (pF) 16150@15V
    Maximum Power Dissipation (mW) 2700
    Typical Fall Time (ns) 16
    Typical Rise Time (ns) 22
    Typical Turn-Off Delay Time (ns) 87
    Typical Turn-On Delay Time (ns) 29
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package PQFN EP
    Pin Count 8
    Standard Package Method QFN
    Terminal Form Surface Mount
    Package Height 1.05(Max)
    Package Length 5.1(Max)
    Package Width 6.25(Max)
    PCB changed 8
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive No
    PPAP No
    Product Category Power MOSFET
    Body Material Si
    Configuration Single Quad Drain Triple Source
    Process Technology TMOS
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 30
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 3
    Maximum Continuous Drain Current (A) 55
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 1
    Maximum Drain Source Resistance (mOhm) 0.65@10V
    Typical Gate Charge @ Vgs (nC) 204@10V
    Typical Gate Charge @ 10V (nC) 204
    Typical Input Capacitance @ Vds (pF) 16150@15V
    Maximum Power Dissipation (mW) 2700
    Typical Fall Time (ns) 16
    Typical Rise Time (ns) 22
    Typical Turn-Off Delay Time (ns) 87
    Typical Turn-On Delay Time (ns) 29
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Packing Method Tape and Reel
    Original Package PQFN EP
    Pin Count 8
    Standard Package Method QFN
    Terminal Form Surface Mount
    Package Height 1.05(Max)
    Package Length 5.1(Max)
    Package Width 6.25(Max)
    PCB changed 8