FDH055N15A

SKU: 75410

Manufacturer: onsemi

Trans MOSFET N-CH Si 150V 167A 3-Pin(3+Tab) TO-247 Tube

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Netherlands

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	PowerTrench
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	150
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	167
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	5.9@10V
Typical Gate Charge @ Vgs (nC)	92@10V
Typical Gate Charge @ 10V (nC)	92
Typical Gate to Drain Charge (nC)	16
Typical Gate to Source Charge (nC)	31
Typical Reverse Recovery Charge (nC)	348
Typical Input Capacitance @ Vds (pF)	7100@75V
Typical Reverse Transfer Capacitance @ Vds (pF)	23@75V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	664
Maximum Power Dissipation (mW)	429000
Typical Fall Time (ns)	21
Typical Rise Time (ns)	67
Typical Turn-Off Delay Time (ns)	71
Typical Turn-On Delay Time (ns)	35
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	668
Typical Gate Plateau Voltage (V)	4.8
Typical Reverse Recovery Time (ns)	105
Maximum Diode Forward Voltage (V)	1.25
Maximum Positive Gate Source Voltage (V)	20
Original Package	TO-247
Pin Count	3
Standard Package Method	TO-247
Terminal Form	Through Hole
Package Height	20.57
Package Length	15.62
Package Width	4.7
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Body Material	Si
Configuration	Single
Process Technology	PowerTrench
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	150
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Operating Junction Temperature (°C)	-55 to 175
Maximum Continuous Drain Current (A)	167
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	5.9@10V
Typical Gate Charge @ Vgs (nC)	92@10V
Typical Gate Charge @ 10V (nC)	92
Typical Gate to Drain Charge (nC)	16
Typical Gate to Source Charge (nC)	31
Typical Reverse Recovery Charge (nC)	348
Typical Input Capacitance @ Vds (pF)	7100@75V
Typical Reverse Transfer Capacitance @ Vds (pF)	23@75V
Minimum Gate Threshold Voltage (V)	2
Typical Output Capacitance (pF)	664
Maximum Power Dissipation (mW)	429000
Typical Fall Time (ns)	21
Typical Rise Time (ns)	67
Typical Turn-Off Delay Time (ns)	71
Typical Turn-On Delay Time (ns)	35
Operating Temperature-Min	-55
Operating Temperature-Max	175
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	668
Typical Gate Plateau Voltage (V)	4.8
Typical Reverse Recovery Time (ns)	105
Maximum Diode Forward Voltage (V)	1.25
Maximum Positive Gate Source Voltage (V)	20
Original Package	TO-247
Pin Count	3
Standard Package Method	TO-247
Terminal Form	Through Hole
Package Height	20.57
Package Length	15.62
Package Width	4.7
PCB changed	3
Tab	Tab