|
EU RoHS
|
Compliant |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Active |
|
HTS
|
8541.29.00.95 |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Dual |
|
Process Technology
|
DMOS |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
N |
|
Number of Elements per pcs
|
2 |
|
Maximum Drain Source Voltage (V)
|
25 |
|
Maximum Gate Source Voltage (V)
|
8 |
|
Maximum Gate Threshold Voltage (V)
|
1.5 |
|
Operating Junction Temperature (°C)
|
-55 to 150 |
|
Maximum Continuous Drain Current (A)
|
0.5 |
|
Maximum Gate Source Leakage Current (nA)
|
100 |
|
Maximum IDSS (uA)
|
1 |
|
Maximum Drain Source Resistance (mOhm)
|
450@4.5V |
|
Typical Gate Charge @ Vgs (nC)
|
1.64@4.5V |
|
Typical Gate to Drain Charge (nC)
|
0.45 |
|
Typical Gate to Source Charge (nC)
|
0.38 |
|
Typical Input Capacitance @ Vds (pF)
|
50@10V |
|
Typical Reverse Transfer Capacitance @ Vds (pF)
|
9@10V |
|
Minimum Gate Threshold Voltage (V)
|
0.65 |
|
Typical Output Capacitance (pF)
|
28 |
|
Maximum Power Dissipation (mW)
|
300 |
|
Typical Fall Time (ns)
|
13 |
|
Typical Rise Time (ns)
|
8.5 |
|
Typical Turn-Off Delay Time (ns)
|
17 |
|
Typical Turn-On Delay Time (ns)
|
3 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Packing Method
|
Tape and Reel |
|
Maximum Positive Gate Source Voltage (V)
|
8 |
|
Maximum Power Dissipation on PCB @ TC=25°C (W)
|
0.3 |
|
Maximum Pulsed Drain Current @ TC=25°C (A)
|
1.5 |
|
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
|
415 |
|
Typical Diode Forward Voltage (V)
|
0.8 |
|
Typical Gate Plateau Voltage (V)
|
1.7 |
|
Maximum Diode Forward Voltage (V)
|
1.2 |
|
Typical Gate Threshold Voltage (V)
|
0.8 |
|
Pin Count
|
6 |
|
Standard Package Method
|
SC |
|
Original Package
|
SC-88 |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
0.9 |
|
Package Length
|
2 |
|
Package Width
|
1.25 |
|
PCB changed
|
6 |