EU RoHS
|
Compliant with Exemption |
ECCN (US)
|
EAR99 |
Part Status
|
Active |
HTS
|
8541.29.00.95 |
SVHC
|
Yes |
SVHC Exceeds Threshold
|
Yes |
Automotive
|
No |
PPAP
|
No |
Product Category
|
Power MOSFET |
Body Material
|
Si |
Configuration
|
Dual Common Drain |
Process Technology
|
TMOS |
Channel Mode
|
Enhancement |
Channel Type
|
N |
Number of Elements per pcs
|
2 |
Maximum Drain Source Voltage (V)
|
40 |
Maximum Gate Source Voltage (V)
|
±20 |
Maximum Continuous Drain Current (A)
|
9@N Channel |
Maximum Drain Source Resistance (mOhm)
|
24@10V@N Channel |
Typical Gate Charge @ Vgs (nC)
|
14@10V@N Channel |
Typical Gate Charge @ 10V (nC)
|
14@N Channel |
Typical Input Capacitance @ Vds (pF)
|
750@20V@N Channel |
Maximum Power Dissipation (mW)
|
3100 |
Typical Fall Time (ns)
|
6@N Channel |
Typical Rise Time (ns)
|
13@N Channel |
Typical Turn-Off Delay Time (ns)
|
17@N Channel |
Typical Turn-On Delay Time (ns)
|
7 |
Operating Temperature-Min
|
-55 |
Operating Temperature-Max
|
150 |
Packing Method
|
Tape and Reel |
Pin Count
|
5 |
Standard Package Method
|
TO-252 |
Original Package
|
DPAK |
Terminal Form
|
Surface Mount |
Package Height
|
2.39(Max) |
Package Length
|
6.73(Max) |
Package Width
|
6.22(Max) |
PCB changed
|
4 |
Tab
|
Tab |