FDC6327C

SKU: 82439

Manufacturer: onsemi

Trans MOSFET N/P-CH 20V 2.7A/1.9A 6-Pin TSOT-23 T/R

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Netherlands

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual
Process Technology	PowerTrench
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±8
Maximum Gate Threshold Voltage (V)	1.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2.7@N Channel
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	80@4.5V@N Channel
Typical Gate Charge @ Vgs (nC)	3.25@4.5V@N Channel
Typical Gate to Drain Charge (nC)	0.9@N Channel
Typical Gate to Source Charge (nC)	0.65@N Channel
Typical Input Capacitance @ Vds (pF)	325@10V@N Channel
Typical Reverse Transfer Capacitance @ Vds (pF)	35@10V@N Channel
Minimum Gate Threshold Voltage (V)	0.4
Typical Output Capacitance (pF)	75@N Channel
Maximum Power Dissipation (mW)	960
Typical Fall Time (ns)	3@N Channel
Typical Rise Time (ns)	9@N Channel
Typical Turn-Off Delay Time (ns)	12@N Channel
Typical Turn-On Delay Time (ns)	5@N Channel
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.96
Maximum Pulsed Drain Current @ TC=25°C (A)	8
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	180
Typical Diode Forward Voltage (V)	0.76@N Channel
Typical Gate Plateau Voltage (V)	1.7@N Channel
Maximum Diode Forward Voltage (V)	1.2
Typical Gate Threshold Voltage (V)	0.9
Maximum Positive Gate Source Voltage (V)	8
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	2.7@N Channel
Pin Count	6
Standard Package Method	SOT
Original Package	TSOT-23
Terminal Form	Surface Mount
Package Height	0.85
Package Length	2.9
Package Width	1.6
PCB changed	6

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Products specifications

EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Dual
Process Technology	PowerTrench
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	2
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±8
Maximum Gate Threshold Voltage (V)	1.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	2.7@N Channel
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	80@4.5V@N Channel
Typical Gate Charge @ Vgs (nC)	3.25@4.5V@N Channel
Typical Gate to Drain Charge (nC)	0.9@N Channel
Typical Gate to Source Charge (nC)	0.65@N Channel
Typical Input Capacitance @ Vds (pF)	325@10V@N Channel
Typical Reverse Transfer Capacitance @ Vds (pF)	35@10V@N Channel
Minimum Gate Threshold Voltage (V)	0.4
Typical Output Capacitance (pF)	75@N Channel
Maximum Power Dissipation (mW)	960
Typical Fall Time (ns)	3@N Channel
Typical Rise Time (ns)	9@N Channel
Typical Turn-Off Delay Time (ns)	12@N Channel
Typical Turn-On Delay Time (ns)	5@N Channel
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tape and Reel
Maximum Power Dissipation on PCB @ TC=25°C (W)	0.96
Maximum Pulsed Drain Current @ TC=25°C (A)	8
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	180
Typical Diode Forward Voltage (V)	0.76@N Channel
Typical Gate Plateau Voltage (V)	1.7@N Channel
Maximum Diode Forward Voltage (V)	1.2
Typical Gate Threshold Voltage (V)	0.9
Maximum Positive Gate Source Voltage (V)	8
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	2.7@N Channel
Pin Count	6
Standard Package Method	SOT
Original Package	TSOT-23
Terminal Form	Surface Mount
Package Height	0.85
Package Length	2.9
Package Width	1.6
PCB changed	6