FCP125N65S3

SKU: 75398

Manufacturer: onsemi

Trans MOSFET N-CH 650V 24A 3-Pin(3+Tab) TO-220 Tube

1790 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperFET III
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	650
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	24
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	125@10V
Typical Gate Charge @ Vgs (nC)	46@10V
Typical Gate Charge @ 10V (nC)	46
Typical Gate to Drain Charge (nC)	19
Typical Gate to Source Charge (nC)	12
Typical Reverse Recovery Charge (nC)	5700
Typical Input Capacitance @ Vds (pF)	1940@400V
Minimum Gate Threshold Voltage (V)	2.5
Typical Output Capacitance (pF)	40
Maximum Power Dissipation (mW)	181000
Typical Fall Time (ns)	17
Typical Rise Time (ns)	26
Typical Turn-Off Delay Time (ns)	73
Typical Turn-On Delay Time (ns)	25
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	60
Typical Gate Plateau Voltage (V)	5.8
Typical Reverse Recovery Time (ns)	339
Maximum Diode Forward Voltage (V)	1.2
Original Package	TO-220
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.4(Max)
Package Length	10.67(Max)
Package Width	4.7(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
SVHC	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperFET III
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	650
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	24
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	125@10V
Typical Gate Charge @ Vgs (nC)	46@10V
Typical Gate Charge @ 10V (nC)	46
Typical Gate to Drain Charge (nC)	19
Typical Gate to Source Charge (nC)	12
Typical Reverse Recovery Charge (nC)	5700
Typical Input Capacitance @ Vds (pF)	1940@400V
Minimum Gate Threshold Voltage (V)	2.5
Typical Output Capacitance (pF)	40
Maximum Power Dissipation (mW)	181000
Typical Fall Time (ns)	17
Typical Rise Time (ns)	26
Typical Turn-Off Delay Time (ns)	73
Typical Turn-On Delay Time (ns)	25
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Positive Gate Source Voltage (V)	30
Maximum Pulsed Drain Current @ TC=25°C (A)	60
Typical Gate Plateau Voltage (V)	5.8
Typical Reverse Recovery Time (ns)	339
Maximum Diode Forward Voltage (V)	1.2
Original Package	TO-220
Pin Count	3
Standard Package Method	TO-220
Terminal Form	Through Hole
Package Height	9.4(Max)
Package Length	10.67(Max)
Package Width	4.7(Max)
PCB changed	3
Tab	Tab