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    FCH077N65F-F085

    SKU: 146194
    Manufacturer: onsemi
    FCH077N65F-F085 ON Semiconductor Transistors MOSFETs N-CH 650V 54A Automotive 3-Pin(3+Tab) TO-247 Tube - Arrow.com
    2150 parts IN STOCK
    Shipped from :
    Netherlands
    Expected Ships :
    Rohs State : Need to verify

    QUANTITY

    Increments of 0 pcs
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive Yes
    PPAP Yes
    Product Category Power MOSFET
    Configuration Single
    Process Technology SuperFET II
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 650
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 5
    Maximum Continuous Drain Current (A) 54
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 77@10V
    Typical Gate Charge @ Vgs (nC) 126@10V
    Typical Gate Charge @ 10V (nC) 126
    Typical Input Capacitance @ Vds (pF) 5385@25V
    Maximum Power Dissipation (mW) 481000
    Typical Fall Time (ns) 5.3
    Typical Rise Time (ns) 27
    Typical Turn-Off Delay Time (ns) 105
    Typical Turn-On Delay Time (ns) 37
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Supplier Temperature Grade Automotive
    Packing Method Tube
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 54
    Typical Gate Threshold Voltage (V) 10
    Pin Count 3
    Standard Package Method TO-247
    Original Package TO-247
    Terminal Form Through Hole
    Package Height 20.57
    Package Length 15.62
    Package Width 4.7
    PCB changed 3
    Tab Tab
    Products specifications
    EU RoHS Compliant with Exemption
    ECCN (US) EAR99
    Part Status NRND
    HTS 8541.29.00.95
    SVHC Yes
    SVHC Exceeds Threshold Yes
    Automotive Yes
    PPAP Yes
    Product Category Power MOSFET
    Configuration Single
    Process Technology SuperFET II
    Channel Mode Enhancement
    Channel Type N
    Number of Elements per pcs 1
    Maximum Drain Source Voltage (V) 650
    Maximum Gate Source Voltage (V) ±20
    Maximum Gate Threshold Voltage (V) 5
    Maximum Continuous Drain Current (A) 54
    Maximum Gate Source Leakage Current (nA) 100
    Maximum IDSS (uA) 10
    Maximum Drain Source Resistance (mOhm) 77@10V
    Typical Gate Charge @ Vgs (nC) 126@10V
    Typical Gate Charge @ 10V (nC) 126
    Typical Input Capacitance @ Vds (pF) 5385@25V
    Maximum Power Dissipation (mW) 481000
    Typical Fall Time (ns) 5.3
    Typical Rise Time (ns) 27
    Typical Turn-Off Delay Time (ns) 105
    Typical Turn-On Delay Time (ns) 37
    Operating Temperature-Min -55
    Operating Temperature-Max 150
    Supplier Temperature Grade Automotive
    Packing Method Tube
    Maximum Continuous Drain Current on PCB @ TC=25°C (A) 54
    Typical Gate Threshold Voltage (V) 10
    Pin Count 3
    Standard Package Method TO-247
    Original Package TO-247
    Terminal Form Through Hole
    Package Height 20.57
    Package Length 15.62
    Package Width 4.7
    PCB changed 3
    Tab Tab