FCH023N65S3-F155

SKU: 44602

Manufacturer: onsemi

Trans MOSFET N-CH 650V 75A 3-Pin(3+Tab) TO-247 Tube

1230 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperFET III
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	650
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	75
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	23@10V
Typical Gate Charge @ Vgs (nC)	222@10V
Typical Gate Charge @ 10V (nC)	222
Typical Gate to Drain Charge (nC)	90
Typical Gate to Source Charge (nC)	54
Typical Reverse Recovery Charge (nC)	17900
Typical Input Capacitance @ Vds (pF)	7160@400V
Typical Reverse Transfer Capacitance @ Vds (pF)	1980@400V
Minimum Gate Threshold Voltage (V)	2.5
Typical Output Capacitance (pF)	195
Maximum Power Dissipation (mW)	595000
Typical Fall Time (ns)	29
Typical Rise Time (ns)	55
Typical Turn-Off Delay Time (ns)	140
Typical Turn-On Delay Time (ns)	45
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	300
Typical Gate Plateau Voltage (V)	5.2
Typical Reverse Recovery Time (ns)	600
Maximum Diode Forward Voltage (V)	1.2
Maximum Positive Gate Source Voltage (V)	30
Original Package	TO-247
Pin Count	3
Standard Package Method	TO-247
Terminal Form	Through Hole
Package Height	20.57
Package Length	15.62
Package Width	4.7
PCB changed	3
Tab	Tab

Your name

Your email

Enquiry

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
SVHC Exceeds Threshold	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperFET III
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	650
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	4.5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	75
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	23@10V
Typical Gate Charge @ Vgs (nC)	222@10V
Typical Gate Charge @ 10V (nC)	222
Typical Gate to Drain Charge (nC)	90
Typical Gate to Source Charge (nC)	54
Typical Reverse Recovery Charge (nC)	17900
Typical Input Capacitance @ Vds (pF)	7160@400V
Typical Reverse Transfer Capacitance @ Vds (pF)	1980@400V
Minimum Gate Threshold Voltage (V)	2.5
Typical Output Capacitance (pF)	195
Maximum Power Dissipation (mW)	595000
Typical Fall Time (ns)	29
Typical Rise Time (ns)	55
Typical Turn-Off Delay Time (ns)	140
Typical Turn-On Delay Time (ns)	45
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	300
Typical Gate Plateau Voltage (V)	5.2
Typical Reverse Recovery Time (ns)	600
Maximum Diode Forward Voltage (V)	1.2
Maximum Positive Gate Source Voltage (V)	30
Original Package	TO-247
Pin Count	3
Standard Package Method	TO-247
Terminal Form	Through Hole
Package Height	20.57
Package Length	15.62
Package Width	4.7
PCB changed	3
Tab	Tab