FCA47N60

SKU: 103640

Manufacturer: onsemi

Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube

10 parts IN STOCK

Shipped from :

Netherlands

Expected Ships :

Rohs State : Need to verify

Increments of 0 pcs

Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	47
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	70@10V
Typical Gate Charge @ Vgs (nC)	210@10V
Typical Gate Charge @ 10V (nC)	210
Typical Gate to Drain Charge (nC)	110
Typical Gate to Source Charge (nC)	38
Typical Reverse Recovery Charge (nC)	25000
Typical Input Capacitance @ Vds (pF)	5900@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	250@25V
Minimum Gate Threshold Voltage (V)	3
Typical Output Capacitance (pF)	3200
Maximum Power Dissipation (mW)	417000
Typical Fall Time (ns)	75
Typical Rise Time (ns)	210
Typical Turn-Off Delay Time (ns)	520
Typical Turn-On Delay Time (ns)	185
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	141
Typical Gate Plateau Voltage (V)	6.2
Typical Reverse Recovery Time (ns)	590
Maximum Diode Forward Voltage (V)	1.4
Maximum Positive Gate Source Voltage (V)	30
Pin Count	3
Standard Package Method	TO-3P
Original Package	TO-3P
Terminal Form	Through Hole
Package Height	18.9(Max)
Package Length	16.2(Max)
Package Width	5(Max)
PCB changed	3
Tab	Tab

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Products specifications

EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
SVHC	Yes
Automotive	No
PPAP	No
Product Category	Power MOSFET
Configuration	Single
Process Technology	SuperFET
Channel Mode	Enhancement
Channel Type	N
Number of Elements per pcs	1
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30
Maximum Gate Threshold Voltage (V)	5
Operating Junction Temperature (°C)	-55 to 150
Maximum Continuous Drain Current (A)	47
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1
Maximum Drain Source Resistance (mOhm)	70@10V
Typical Gate Charge @ Vgs (nC)	210@10V
Typical Gate Charge @ 10V (nC)	210
Typical Gate to Drain Charge (nC)	110
Typical Gate to Source Charge (nC)	38
Typical Reverse Recovery Charge (nC)	25000
Typical Input Capacitance @ Vds (pF)	5900@25V
Typical Reverse Transfer Capacitance @ Vds (pF)	250@25V
Minimum Gate Threshold Voltage (V)	3
Typical Output Capacitance (pF)	3200
Maximum Power Dissipation (mW)	417000
Typical Fall Time (ns)	75
Typical Rise Time (ns)	210
Typical Turn-Off Delay Time (ns)	520
Typical Turn-On Delay Time (ns)	185
Operating Temperature-Min	-55
Operating Temperature-Max	150
Packing Method	Tube
Maximum Pulsed Drain Current @ TC=25°C (A)	141
Typical Gate Plateau Voltage (V)	6.2
Typical Reverse Recovery Time (ns)	590
Maximum Diode Forward Voltage (V)	1.4
Maximum Positive Gate Source Voltage (V)	30
Pin Count	3
Standard Package Method	TO-3P
Original Package	TO-3P
Terminal Form	Through Hole
Package Height	18.9(Max)
Package Length	16.2(Max)
Package Width	5(Max)
PCB changed	3
Tab	Tab