|
EU RoHS
|
Compliant with Exemption |
|
ECCN (US)
|
EAR99 |
|
Part Status
|
Obsolete |
|
SVHC
|
Yes |
|
SVHC Exceeds Threshold
|
Yes |
|
Automotive
|
No |
|
PPAP
|
No |
|
Product Category
|
Power MOSFET |
|
Configuration
|
Single Quad Drain |
|
Channel Mode
|
Enhancement |
|
Channel Type
|
P |
|
Number of Elements per pcs
|
1 |
|
Maximum Drain Source Voltage (V)
|
30 |
|
Maximum Gate Source Voltage (V)
|
±20 |
|
Operating Junction Temperature (°C)
|
-55 to 150 |
|
Maximum Continuous Drain Current (A)
|
6 |
|
Maximum Gate Source Leakage Current (nA)
|
10000 |
|
Maximum IDSS (uA)
|
1 |
|
Maximum Drain Source Resistance (mOhm)
|
43@10V |
|
Typical Gate Charge @ Vgs (nC)
|
13@10V |
|
Typical Gate Charge @ 10V (nC)
|
13 |
|
Typical Gate to Drain Charge (nC)
|
3.2 |
|
Typical Gate to Source Charge (nC)
|
1.8 |
|
Typical Input Capacitance @ Vds (pF)
|
600@10V |
|
Typical Reverse Transfer Capacitance @ Vds (pF)
|
110@10V |
|
Typical Output Capacitance (pF)
|
145 |
|
Maximum Power Dissipation (mW)
|
1600 |
|
Typical Fall Time (ns)
|
45 |
|
Typical Rise Time (ns)
|
27 |
|
Typical Turn-Off Delay Time (ns)
|
62 |
|
Typical Turn-On Delay Time (ns)
|
7.4 |
|
Operating Temperature-Min
|
-55 |
|
Operating Temperature-Max
|
150 |
|
Packing Method
|
Tape and Reel |
|
Maximum Positive Gate Source Voltage (V)
|
20 |
|
Maximum Pulsed Drain Current @ TC=25°C (A)
|
24 |
|
Typical Diode Forward Voltage (V)
|
0.87 |
|
Typical Gate Plateau Voltage (V)
|
3 |
|
Maximum Diode Forward Voltage (V)
|
1.2 |
|
Pin Count
|
6 |
|
Standard Package Method
|
SOT |
|
Original Package
|
CPH |
|
Terminal Form
|
Surface Mount |
|
Package Height
|
0.9 |
|
Package Length
|
2.9 |
|
Package Width
|
1.6 |
|
PCB changed
|
6 |